Theorems on the global convergence of the nonlinear homotopy method for MOS circuits

Dan Niu; Guangming Hu; Yasuaki Inoue

doi:10.1109/PrimeAsia.2011.6075066

Theorems on the global convergence of the nonlinear homotopy method for MOS circuits

Dan Niu^*, Guangming Hu, Yasuaki Inoue

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Citations (Scopus)

Abstract

Finding DC operating points of nonlinear circuits is an important and difficult task. The Newton-Raphson method adopted in the SPICE-like simulators often fails to converge to a solution. To overcome this convergence problem, homotopy methods have been studied from various viewpoints. However most previous studies are mainly focused on the bipolar transistor circuits and no paper presents the global convergence of the homotopy method for MOS circuits. This paper extends the nonlinear homotopy method to MOS transistor circuits and presents the global convergence theorems of the homotopy method for MOS circuits.

Original language	English
Title of host publication	Asia Pacific Conference on Postgraduate Research in Microelectronics and Electronics
Pages	41-44
Number of pages	4
DOIs	https://doi.org/10.1109/PrimeAsia.2011.6075066
Publication status	Published - 2011
Event	3rd IEEE Asia Pacific Conference on Postgraduate Research in Microelectronics and Electronics, PrimeAsia 2011 - Macau Duration: 2011 Oct 6 → 2011 Oct 8

Other

Other	3rd IEEE Asia Pacific Conference on Postgraduate Research in Microelectronics and Electronics, PrimeAsia 2011
City	Macau
Period	11/10/6 → 11/10/8

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering
Education

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Niu, D, Hu, G & Inoue, Y 2011, Theorems on the global convergence of the nonlinear homotopy method for MOS circuits. in Asia Pacific Conference on Postgraduate Research in Microelectronics and Electronics., 6075066, pp. 41-44, 3rd IEEE Asia Pacific Conference on Postgraduate Research in Microelectronics and Electronics, PrimeAsia 2011, Macau, 11/10/6. https://doi.org/10.1109/PrimeAsia.2011.6075066

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doi = "10.1109/PrimeAsia.2011.6075066",

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AB - Finding DC operating points of nonlinear circuits is an important and difficult task. The Newton-Raphson method adopted in the SPICE-like simulators often fails to converge to a solution. To overcome this convergence problem, homotopy methods have been studied from various viewpoints. However most previous studies are mainly focused on the bipolar transistor circuits and no paper presents the global convergence of the homotopy method for MOS circuits. This paper extends the nonlinear homotopy method to MOS transistor circuits and presents the global convergence theorems of the homotopy method for MOS circuits.

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Y2 - 6 October 2011 through 8 October 2011

ER -

Theorems on the global convergence of the nonlinear homotopy method for MOS circuits

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