Theoretical design of 460 nm zncdsse laser diodes

Wataru Imajuku, Masashi Takahashi, Masakazu Kobayash, Akihiko Yoshikawa

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)


Theoretical design of ZnSSe/ZnCdSSe laser diodes emitting 460 nm at room temperature (RT) was studied by means of threshold current analysis. The threshold current density calculation was based on the laser theoryestablished for the III-V laser diode (LD) system. The result of the threshold current density calculation indicatedthat the reduction of carrier overflow is an essential issue in realizing the device with a reasonable threshold currentlevel at RT. Another indication is that 30% S content in the ZnSSe cladding layer would be a suitable targetvalue for a practical 460 nm LD at RT, along with a multiple quantum barrier structure. The predicted thresholdcurrent density of such a LD could be as low as 450 A/cm2 at RT.

Original languageEnglish
Pages (from-to)1861-1866
Number of pages6
JournalJapanese journal of applied physics
Issue number4R
Publication statusPublished - 1995 Apr
Externally publishedYes


  • Blue LD
  • MQB structure
  • MQW laser
  • ZnCdSSe
  • ZnSSe
  • ZnSe

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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