Theoretical design of 460 nm zncdsse laser diodes

Wataru Imajuku; Masashi Takahashi; Masakazu Kobayash; Akihiko Yoshikawa

doi:10.1143/JJAP.34.1861

Theoretical design of 460 nm zncdsse laser diodes

Wataru Imajuku, Masashi Takahashi, Masakazu Kobayash, Akihiko Yoshikawa

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

Theoretical design of ZnSSe/ZnCdSSe laser diodes emitting 460 nm at room temperature (RT) was studied by means of threshold current analysis. The threshold current density calculation was based on the laser theoryestablished for the III-V laser diode (LD) system. The result of the threshold current density calculation indicatedthat the reduction of carrier overflow is an essential issue in realizing the device with a reasonable threshold currentlevel at RT. Another indication is that 30% S content in the ZnSSe cladding layer would be a suitable targetvalue for a practical 460 nm LD at RT, along with a multiple quantum barrier structure. The predicted thresholdcurrent density of such a LD could be as low as 450 A/cm² at RT.

Original language	English
Pages (from-to)	1861-1866
Number of pages	6
Journal	Japanese journal of applied physics
Volume	34
Issue number	4R
DOIs	https://doi.org/10.1143/JJAP.34.1861
Publication status	Published - 1995 Apr
Externally published	Yes

Keywords

Blue LD
MQB structure
MQW laser
ZnCdSSe
ZnSSe
ZnSe

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.34.1861

Cite this

@article{c986bcee767a4cb1b3b45f5cfea9b850,

title = "Theoretical design of 460 nm zncdsse laser diodes",

abstract = "Theoretical design of ZnSSe/ZnCdSSe laser diodes emitting 460 nm at room temperature (RT) was studied by means of threshold current analysis. The threshold current density calculation was based on the laser theoryestablished for the III-V laser diode (LD) system. The result of the threshold current density calculation indicatedthat the reduction of carrier overflow is an essential issue in realizing the device with a reasonable threshold currentlevel at RT. Another indication is that 30% S content in the ZnSSe cladding layer would be a suitable targetvalue for a practical 460 nm LD at RT, along with a multiple quantum barrier structure. The predicted thresholdcurrent density of such a LD could be as low as 450 A/cm2 at RT.",

keywords = "Blue LD, MQB structure, MQW laser, ZnCdSSe, ZnSSe, ZnSe",

author = "Wataru Imajuku and Masashi Takahashi and Masakazu Kobayash and Akihiko Yoshikawa",

year = "1995",

month = apr,

doi = "10.1143/JJAP.34.1861",

language = "English",

volume = "34",

pages = "1861--1866",

journal = "Japanese journal of applied physics",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "4R",

}

TY - JOUR

T1 - Theoretical design of 460 nm zncdsse laser diodes

AU - Imajuku, Wataru

AU - Takahashi, Masashi

AU - Kobayash, Masakazu

AU - Yoshikawa, Akihiko

PY - 1995/4

Y1 - 1995/4

N2 - Theoretical design of ZnSSe/ZnCdSSe laser diodes emitting 460 nm at room temperature (RT) was studied by means of threshold current analysis. The threshold current density calculation was based on the laser theoryestablished for the III-V laser diode (LD) system. The result of the threshold current density calculation indicatedthat the reduction of carrier overflow is an essential issue in realizing the device with a reasonable threshold currentlevel at RT. Another indication is that 30% S content in the ZnSSe cladding layer would be a suitable targetvalue for a practical 460 nm LD at RT, along with a multiple quantum barrier structure. The predicted thresholdcurrent density of such a LD could be as low as 450 A/cm2 at RT.

AB - Theoretical design of ZnSSe/ZnCdSSe laser diodes emitting 460 nm at room temperature (RT) was studied by means of threshold current analysis. The threshold current density calculation was based on the laser theoryestablished for the III-V laser diode (LD) system. The result of the threshold current density calculation indicatedthat the reduction of carrier overflow is an essential issue in realizing the device with a reasonable threshold currentlevel at RT. Another indication is that 30% S content in the ZnSSe cladding layer would be a suitable targetvalue for a practical 460 nm LD at RT, along with a multiple quantum barrier structure. The predicted thresholdcurrent density of such a LD could be as low as 450 A/cm2 at RT.

KW - Blue LD

KW - MQB structure

KW - MQW laser

KW - ZnCdSSe

KW - ZnSSe

KW - ZnSe

UR - http://www.scopus.com/inward/record.url?scp=0029288730&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029288730&partnerID=8YFLogxK

U2 - 10.1143/JJAP.34.1861

DO - 10.1143/JJAP.34.1861

M3 - Article

AN - SCOPUS:0029288730

SN - 0021-4922

VL - 34

SP - 1861

EP - 1866

JO - Japanese journal of applied physics

JF - Japanese journal of applied physics

IS - 4R

ER -

Theoretical design of 460 nm zncdsse laser diodes

Abstract

Keywords

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