Theory of electron transport near anderson-mott transitions

Hiroshi Shinaoka*, Masatoshi Imada

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


We present a theory of the DC electron transport in insulators near Anderson-Mott transitions under the influence of coexisting electron correlation and randomness. At sufficiently low temperatures, the DC electron transport in Anderson-Mott insulators is determined by the single-particle density of states (DOS) near the Fermi energy (EF). Anderson insulators, caused by randomness, are characterized by a nonzero DOS at EF. However, recently, the authors proposed that coexisting randomness and shortranged interaction in insulators open a soft Hubbard gap in the DOS, and the DOS vanishes only at EF. Based on the picture of the soft Hubbard gap, we derive a formula for the critical behavior for the temperature dependence of the DC resistivity. Comparisons of the present theory with experimental results of electrostatic carrier doping into an organic conductor k-(BEDT-TTF) 2Cu[N(CN)2]Br demonstrate the evidence for the present soft-Hubbard scaling.

Original languageEnglish
Article number113703
Journaljournal of the physical society of japan
Issue number11
Publication statusPublished - 2010 Nov
Externally publishedYes


  • Anderson localization
  • Anderson-Hubbard model
  • Disorder
  • Electron correlation
  • Mott transition
  • Rrandomness
  • Single-particle density of states
  • Soft gap

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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