Thermal conductivity of amorphous indium-gallium-zinc oxide thin films

Toru Yoshikawa*, Takashi Yagi, Nobuto Oka, Junjun Jia, Yuichiro Yamashita, Koichiro Hattori, Yutaka Seino, Naoyuki Taketoshi, Tetsuya Baba, Yuzo Shigesato

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

57 Citations (Scopus)


We investigated the thermal conductivity of 200-nm-thick amorphous indium-gallium-zinc-oxide (a-IGZO) films. Films with a chemical composition of In : Ga : Zn = 1 : 1 : 0:6 were prepared by dc magnetron sputtering using an IGZO ceramic target and an Ar-O2 sputtering gas. The carrier density of the films was systematically controlled from 1014 to > 10 19 cm-3 by varying the O2 flow ratio. Their Hall mobility was slightly higher than 10 cm2.V-1.s -1. Those films were sandwiched between 100-nm-thick Mo layers; their thermal diffusivity, measured by a pulsed light heating thermoreflectance technique, was ∼5.4 × 10-7 m2.s-1 and was almost independent of the carrier density. The average thermal conductivity was 1.4W.m-1.K-1.

Original languageEnglish
Article number021101
JournalApplied Physics Express
Issue number2
Publication statusPublished - 2013 Feb 1
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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