Thermal conductivity of amorphous indium-gallium-zinc oxide thin films

Toru Yoshikawa; Takashi Yagi; Nobuto Oka; Junjun Jia; Yuichiro Yamashita; Koichiro Hattori; Yutaka Seino; Naoyuki Taketoshi; Tetsuya Baba; Yuzo Shigesato

doi:10.7567/APEX.6.021101

Thermal conductivity of amorphous indium-gallium-zinc oxide thin films

Toru Yoshikawa^*, Takashi Yagi, Nobuto Oka, Junjun Jia, Yuichiro Yamashita, Koichiro Hattori, Yutaka Seino, Naoyuki Taketoshi, Tetsuya Baba, Yuzo Shigesato

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

57 Citations (Scopus)

Abstract

We investigated the thermal conductivity of 200-nm-thick amorphous indium-gallium-zinc-oxide (a-IGZO) films. Films with a chemical composition of In : Ga : Zn = 1 : 1 : 0:6 were prepared by dc magnetron sputtering using an IGZO ceramic target and an Ar-O₂ sputtering gas. The carrier density of the films was systematically controlled from 10¹⁴ to > 10 ¹⁹ cm^-3 by varying the O₂ flow ratio. Their Hall mobility was slightly higher than 10 cm².V^-1.s ^-1. Those films were sandwiched between 100-nm-thick Mo layers; their thermal diffusivity, measured by a pulsed light heating thermoreflectance technique, was ∼5.4 × 10^-7 m².s^-1 and was almost independent of the carrier density. The average thermal conductivity was 1.4W.m^-1.K^-1.

Original language	English
Article number	021101
Journal	Applied Physics Express
Volume	6
Issue number	2
DOIs	https://doi.org/10.7567/APEX.6.021101
Publication status	Published - 2013 Feb 1
Externally published	Yes

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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title = "Thermal conductivity of amorphous indium-gallium-zinc oxide thin films",

abstract = "We investigated the thermal conductivity of 200-nm-thick amorphous indium-gallium-zinc-oxide (a-IGZO) films. Films with a chemical composition of In : Ga : Zn = 1 : 1 : 0:6 were prepared by dc magnetron sputtering using an IGZO ceramic target and an Ar-O2 sputtering gas. The carrier density of the films was systematically controlled from 1014 to > 10 19 cm-3 by varying the O2 flow ratio. Their Hall mobility was slightly higher than 10 cm2.V-1.s -1. Those films were sandwiched between 100-nm-thick Mo layers; their thermal diffusivity, measured by a pulsed light heating thermoreflectance technique, was ∼5.4 × 10-7 m2.s-1 and was almost independent of the carrier density. The average thermal conductivity was 1.4W.m-1.K-1.",

author = "Toru Yoshikawa and Takashi Yagi and Nobuto Oka and Junjun Jia and Yuichiro Yamashita and Koichiro Hattori and Yutaka Seino and Naoyuki Taketoshi and Tetsuya Baba and Yuzo Shigesato",

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doi = "10.7567/APEX.6.021101",

language = "English",

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AU - Yoshikawa, Toru

AU - Yagi, Takashi

AU - Oka, Nobuto

AU - Jia, Junjun

AU - Yamashita, Yuichiro

AU - Hattori, Koichiro

AU - Seino, Yutaka

AU - Taketoshi, Naoyuki

AU - Baba, Tetsuya

AU - Shigesato, Yuzo

PY - 2013/2/1

Y1 - 2013/2/1

N2 - We investigated the thermal conductivity of 200-nm-thick amorphous indium-gallium-zinc-oxide (a-IGZO) films. Films with a chemical composition of In : Ga : Zn = 1 : 1 : 0:6 were prepared by dc magnetron sputtering using an IGZO ceramic target and an Ar-O2 sputtering gas. The carrier density of the films was systematically controlled from 1014 to > 10 19 cm-3 by varying the O2 flow ratio. Their Hall mobility was slightly higher than 10 cm2.V-1.s -1. Those films were sandwiched between 100-nm-thick Mo layers; their thermal diffusivity, measured by a pulsed light heating thermoreflectance technique, was ∼5.4 × 10-7 m2.s-1 and was almost independent of the carrier density. The average thermal conductivity was 1.4W.m-1.K-1.

AB - We investigated the thermal conductivity of 200-nm-thick amorphous indium-gallium-zinc-oxide (a-IGZO) films. Films with a chemical composition of In : Ga : Zn = 1 : 1 : 0:6 were prepared by dc magnetron sputtering using an IGZO ceramic target and an Ar-O2 sputtering gas. The carrier density of the films was systematically controlled from 1014 to > 10 19 cm-3 by varying the O2 flow ratio. Their Hall mobility was slightly higher than 10 cm2.V-1.s -1. Those films were sandwiched between 100-nm-thick Mo layers; their thermal diffusivity, measured by a pulsed light heating thermoreflectance technique, was ∼5.4 × 10-7 m2.s-1 and was almost independent of the carrier density. The average thermal conductivity was 1.4W.m-1.K-1.

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Thermal conductivity of amorphous indium-gallium-zinc oxide thin films

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