Thermal decomposition of tetraethoxysilane studied by atmospheric mass-spectrometer

Keita Sirakami; Kenji Kobayashi; Hiroshi Kikuchi; Akio Fuwa

Thermal decomposition of tetraethoxysilane studied by atmospheric mass-spectrometer

Keita Sirakami^*, Kenji Kobayashi, Hiroshi Kikuchi, Akio Fuwa

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Experimential observation of SiO₂ precipitation reaction on a Si substrate through thermal decomposition of TEOS was pursued as functions of temperature, TEOS concentration and residence time where the gaseous reaction products identified by the atmospheric mass-spectrometer are C₂H₅ and C₂H₅OH, from which the following reaction scheme can be proposed: (1) The overall thermal decomposition reaction of TEOS to precipitate SiO₂(s) can be expressed as follows: SiO (OC₂H₅)₄(g) → SiO₂(s) +2C₂H₄(g) +2C₂H₅OH (g) (2) The gaseous reaction intermediate species observed is SiO (OC₂H₅)₂, which may be produced by the following reaction: Si (OC₂H₅)₄(g) → SiO(OC₂H₅)₂(g) +C₂H₄(g) +C₂H₅OH(g) (3) The oder of reaction with respect to the TEOS concentration obtained experimentally is from 0.2 to 0.5. (4) The above-mentioned experimental observation, in which the step (c) is the rate controlling step and the oder of reaction is (1/3), leads to (a) the thermal decomposition of TEOS to produce the intermediate: Si(OC₂H₅)₄(g) → SiO (OC₂H₅)₂(g) +C₂H₄(g) + C₂H₅OH(g) (b) the adsorption reaction of the intermediate: SiO(OC₂H₅)₂(g) + * → SiO(OC₂H₅) * (c) the SiO₂(s) precipitation from the adsorpted speciees: SiO(OC₂H₅)₂*→SiO₂(s) +C₂H₄(g) +C₂H₅OH(g).

Original language	English
Pages (from-to)	751-756
Number of pages	6
Journal	Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals
Volume	60
Issue number	8
Publication status	Published - 1996

Keywords

Kinetics mass spectrometer
Tetraethoxysilane
Thermal decomposition

ASJC Scopus subject areas

Metals and Alloys

Cite this

@article{17d3f419c9cc43fea1ec29bc8e6087bc,

title = "Thermal decomposition of tetraethoxysilane studied by atmospheric mass-spectrometer",

abstract = "Experimential observation of SiO2 precipitation reaction on a Si substrate through thermal decomposition of TEOS was pursued as functions of temperature, TEOS concentration and residence time where the gaseous reaction products identified by the atmospheric mass-spectrometer are C2H5 and C2H5OH, from which the following reaction scheme can be proposed: (1) The overall thermal decomposition reaction of TEOS to precipitate SiO2(s) can be expressed as follows: SiO (OC2H5)4(g) → SiO2(s) +2C2H4(g) +2C2H5OH (g) (2) The gaseous reaction intermediate species observed is SiO (OC2H5)2, which may be produced by the following reaction: Si (OC2H5)4(g) → SiO(OC2H5)2(g) +C2H4(g) +C2H5OH(g) (3) The oder of reaction with respect to the TEOS concentration obtained experimentally is from 0.2 to 0.5. (4) The above-mentioned experimental observation, in which the step (c) is the rate controlling step and the oder of reaction is (1/3), leads to (a) the thermal decomposition of TEOS to produce the intermediate: Si(OC2H5)4(g) → SiO (OC2H5)2(g) +C2H4(g) + C2H5OH(g) (b) the adsorption reaction of the intermediate: SiO(OC2H5)2(g) + * → SiO(OC2H5) * (c) the SiO2(s) precipitation from the adsorpted speciees: SiO(OC2H5)2*→SiO2(s) +C2H4(g) +C2H5OH(g).",

keywords = "Kinetics mass spectrometer, Tetraethoxysilane, Thermal decomposition",

author = "Keita Sirakami and Kenji Kobayashi and Hiroshi Kikuchi and Akio Fuwa",

year = "1996",

language = "English",

volume = "60",

pages = "751--756",

journal = "Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals",

issn = "0021-4876",

publisher = "Japan Institute of Metals (JIM)",

number = "8",

}

TY - JOUR

T1 - Thermal decomposition of tetraethoxysilane studied by atmospheric mass-spectrometer

AU - Sirakami, Keita

AU - Kobayashi, Kenji

AU - Kikuchi, Hiroshi

AU - Fuwa, Akio

PY - 1996

Y1 - 1996

N2 - Experimential observation of SiO2 precipitation reaction on a Si substrate through thermal decomposition of TEOS was pursued as functions of temperature, TEOS concentration and residence time where the gaseous reaction products identified by the atmospheric mass-spectrometer are C2H5 and C2H5OH, from which the following reaction scheme can be proposed: (1) The overall thermal decomposition reaction of TEOS to precipitate SiO2(s) can be expressed as follows: SiO (OC2H5)4(g) → SiO2(s) +2C2H4(g) +2C2H5OH (g) (2) The gaseous reaction intermediate species observed is SiO (OC2H5)2, which may be produced by the following reaction: Si (OC2H5)4(g) → SiO(OC2H5)2(g) +C2H4(g) +C2H5OH(g) (3) The oder of reaction with respect to the TEOS concentration obtained experimentally is from 0.2 to 0.5. (4) The above-mentioned experimental observation, in which the step (c) is the rate controlling step and the oder of reaction is (1/3), leads to (a) the thermal decomposition of TEOS to produce the intermediate: Si(OC2H5)4(g) → SiO (OC2H5)2(g) +C2H4(g) + C2H5OH(g) (b) the adsorption reaction of the intermediate: SiO(OC2H5)2(g) + * → SiO(OC2H5) * (c) the SiO2(s) precipitation from the adsorpted speciees: SiO(OC2H5)2*→SiO2(s) +C2H4(g) +C2H5OH(g).

AB - Experimential observation of SiO2 precipitation reaction on a Si substrate through thermal decomposition of TEOS was pursued as functions of temperature, TEOS concentration and residence time where the gaseous reaction products identified by the atmospheric mass-spectrometer are C2H5 and C2H5OH, from which the following reaction scheme can be proposed: (1) The overall thermal decomposition reaction of TEOS to precipitate SiO2(s) can be expressed as follows: SiO (OC2H5)4(g) → SiO2(s) +2C2H4(g) +2C2H5OH (g) (2) The gaseous reaction intermediate species observed is SiO (OC2H5)2, which may be produced by the following reaction: Si (OC2H5)4(g) → SiO(OC2H5)2(g) +C2H4(g) +C2H5OH(g) (3) The oder of reaction with respect to the TEOS concentration obtained experimentally is from 0.2 to 0.5. (4) The above-mentioned experimental observation, in which the step (c) is the rate controlling step and the oder of reaction is (1/3), leads to (a) the thermal decomposition of TEOS to produce the intermediate: Si(OC2H5)4(g) → SiO (OC2H5)2(g) +C2H4(g) + C2H5OH(g) (b) the adsorption reaction of the intermediate: SiO(OC2H5)2(g) + * → SiO(OC2H5) * (c) the SiO2(s) precipitation from the adsorpted speciees: SiO(OC2H5)2*→SiO2(s) +C2H4(g) +C2H5OH(g).

KW - Kinetics mass spectrometer

KW - Tetraethoxysilane

KW - Thermal decomposition

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M3 - Article

AN - SCOPUS:0030206581

SN - 0021-4876

VL - 60

SP - 751

EP - 756

JO - Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals

JF - Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals

IS - 8

ER -

Thermal decomposition of tetraethoxysilane studied by atmospheric mass-spectrometer

Abstract

Keywords

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