Thermodynamic analysis of the In-P, Ga-As, In-As and Al-Sb systems

K. Yamaguchi; K. Itagaki; Y. A. Chang

doi:10.1016/S0364-5916(97)00006-0

Thermodynamic analysis of the In-P, Ga-As, In-As and Al-Sb systems

K. Yamaguchi^*, K. Itagaki, Y. A. Chang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

Thermodynamic and phase diagram data are used to optimize the thermodynamic model parameter values of the liquid phases in four III-V binary systems: In-P, Ga-As, In-As and Al-Sb. An associated solution model is used to describe the thermodynamic properties of the liquid phases and the III-V compound semiconductors are taken to be stoichiometric (or line) compounds. For each of the binary systems, a set of thermodynamic parameters for the liquid and compound semiconductors are obtained. Using these values, the calculated phase diagrams are in agreement with the experimentally determined ones. Moreover, the model-calculated thermodynamic values also in agreement with the experimentally determined values.

Original language	English
Pages (from-to)	439-446
Number of pages	8
Journal	Calphad: Computer Coupling of Phase Diagrams and Thermochemistry
Volume	20
Issue number	4
DOIs	https://doi.org/10.1016/S0364-5916(97)00006-0
Publication status	Published - 1996 Dec 1
Externally published	Yes

ASJC Scopus subject areas

Chemistry(all)
Chemical Engineering(all)
Computer Science Applications

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10.1016/S0364-5916(97)00006-0

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abstract = "Thermodynamic and phase diagram data are used to optimize the thermodynamic model parameter values of the liquid phases in four III-V binary systems: In-P, Ga-As, In-As and Al-Sb. An associated solution model is used to describe the thermodynamic properties of the liquid phases and the III-V compound semiconductors are taken to be stoichiometric (or line) compounds. For each of the binary systems, a set of thermodynamic parameters for the liquid and compound semiconductors are obtained. Using these values, the calculated phase diagrams are in agreement with the experimentally determined ones. Moreover, the model-calculated thermodynamic values also in agreement with the experimentally determined values.",

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T1 - Thermodynamic analysis of the In-P, Ga-As, In-As and Al-Sb systems

AU - Yamaguchi, K.

AU - Itagaki, K.

AU - Chang, Y. A.

PY - 1996/12/1

Y1 - 1996/12/1

N2 - Thermodynamic and phase diagram data are used to optimize the thermodynamic model parameter values of the liquid phases in four III-V binary systems: In-P, Ga-As, In-As and Al-Sb. An associated solution model is used to describe the thermodynamic properties of the liquid phases and the III-V compound semiconductors are taken to be stoichiometric (or line) compounds. For each of the binary systems, a set of thermodynamic parameters for the liquid and compound semiconductors are obtained. Using these values, the calculated phase diagrams are in agreement with the experimentally determined ones. Moreover, the model-calculated thermodynamic values also in agreement with the experimentally determined values.

AB - Thermodynamic and phase diagram data are used to optimize the thermodynamic model parameter values of the liquid phases in four III-V binary systems: In-P, Ga-As, In-As and Al-Sb. An associated solution model is used to describe the thermodynamic properties of the liquid phases and the III-V compound semiconductors are taken to be stoichiometric (or line) compounds. For each of the binary systems, a set of thermodynamic parameters for the liquid and compound semiconductors are obtained. Using these values, the calculated phase diagrams are in agreement with the experimentally determined ones. Moreover, the model-calculated thermodynamic values also in agreement with the experimentally determined values.

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Thermodynamic analysis of the In-P, Ga-As, In-As and Al-Sb systems

Abstract

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