Thermoelectric Characteristics of Rapid-Melting-Grown SiGe Wires Measured by Peltier Cooling Experiment

Shuichiro Hashimoto; Kouta Takahashi; Shunsuke Oba; Takuya Terada; Masataka Ogasawara; Motohiro Tomita; Masashi Kurosawa; Takanobu Watanabe

doi:10.1109/EDTM.2018.8421517

Thermoelectric Characteristics of Rapid-Melting-Grown SiGe Wires Measured by Peltier Cooling Experiment

Shuichiro Hashimoto, Kouta Takahashi, Shunsuke Oba, Takuya Terada, Masataka Ogasawara, Motohiro Tomita, Masashi Kurosawa, Takanobu Watanabe

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

We performed a Peltier cooling experiment using SiGe wires fabricated by rapid-melting-growth (RMG) method. Thermal conductivity κ of SiGe wires estimated from the Peltier heating/cooling rate showed a significant dependence on the RMG process; the growth into one direction from a Si seed island exhibit a smaller κ than the bilateral growth. According to molecular dynamics simulation, the κ hardly depend on the compositional distribution, indicating the impact of the difference in the RMG processes.

Original language	English
Title of host publication	2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	283-285
Number of pages	3
ISBN (Print)	9781538637111
DOIs	https://doi.org/10.1109/EDTM.2018.8421517
Publication status	Published - 2018 Jul 26
Event	2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Kobe, Japan Duration: 2018 Mar 13 → 2018 Mar 16

Publication series

Name	2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings

Other

Other	2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018
Country/Territory	Japan
City	Kobe
Period	18/3/13 → 18/3/16

Keywords

Peltier cooling
SiGe
thermal conductivity

ASJC Scopus subject areas

Electrical and Electronic Engineering
Industrial and Manufacturing Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/EDTM.2018.8421517

Cite this

Hashimoto, S., Takahashi, K., Oba, S., Terada, T., Ogasawara, M., Tomita, M., Kurosawa, M., & Watanabe, T. (2018). Thermoelectric Characteristics of Rapid-Melting-Grown SiGe Wires Measured by Peltier Cooling Experiment. In 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings (pp. 283-285). Article 8421517 (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2018.8421517

Thermoelectric Characteristics of Rapid-Melting-Grown SiGe Wires Measured by Peltier Cooling Experiment. / Hashimoto, Shuichiro; Takahashi, Kouta; Oba, Shunsuke et al.
2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. p. 283-285 8421517 (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hashimoto, S, Takahashi, K, Oba, S, Terada, T, Ogasawara, M, Tomita, M, Kurosawa, M & Watanabe, T 2018, Thermoelectric Characteristics of Rapid-Melting-Grown SiGe Wires Measured by Peltier Cooling Experiment. in 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings., 8421517, 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 283-285, 2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018, Kobe, Japan, 18/3/13. https://doi.org/10.1109/EDTM.2018.8421517

Hashimoto S, Takahashi K, Oba S, Terada T, Ogasawara M, Tomita M et al. Thermoelectric Characteristics of Rapid-Melting-Grown SiGe Wires Measured by Peltier Cooling Experiment. In 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2018. p. 283-285. 8421517. (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings). doi: 10.1109/EDTM.2018.8421517

Hashimoto, Shuichiro ; Takahashi, Kouta ; Oba, Shunsuke et al. / Thermoelectric Characteristics of Rapid-Melting-Grown SiGe Wires Measured by Peltier Cooling Experiment. 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 283-285 (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings).

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title = "Thermoelectric Characteristics of Rapid-Melting-Grown SiGe Wires Measured by Peltier Cooling Experiment",

abstract = "We performed a Peltier cooling experiment using SiGe wires fabricated by rapid-melting-growth (RMG) method. Thermal conductivity κ of SiGe wires estimated from the Peltier heating/cooling rate showed a significant dependence on the RMG process; the growth into one direction from a Si seed island exhibit a smaller κ than the bilateral growth. According to molecular dynamics simulation, the κ hardly depend on the compositional distribution, indicating the impact of the difference in the RMG processes.",

keywords = "Peltier cooling, SiGe, thermal conductivity",

author = "Shuichiro Hashimoto and Kouta Takahashi and Shunsuke Oba and Takuya Terada and Masataka Ogasawara and Motohiro Tomita and Masashi Kurosawa and Takanobu Watanabe",

note = "Funding Information: This work was supported by CREST, (JPMJCR15Q7), and by PRESTO, (JPMJPR15R2). Publisher Copyright: {\textcopyright} 2018 IEEE.; 2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 ; Conference date: 13-03-2018 Through 16-03-2018",

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AU - Terada, Takuya

AU - Ogasawara, Masataka

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N2 - We performed a Peltier cooling experiment using SiGe wires fabricated by rapid-melting-growth (RMG) method. Thermal conductivity κ of SiGe wires estimated from the Peltier heating/cooling rate showed a significant dependence on the RMG process; the growth into one direction from a Si seed island exhibit a smaller κ than the bilateral growth. According to molecular dynamics simulation, the κ hardly depend on the compositional distribution, indicating the impact of the difference in the RMG processes.

AB - We performed a Peltier cooling experiment using SiGe wires fabricated by rapid-melting-growth (RMG) method. Thermal conductivity κ of SiGe wires estimated from the Peltier heating/cooling rate showed a significant dependence on the RMG process; the growth into one direction from a Si seed island exhibit a smaller κ than the bilateral growth. According to molecular dynamics simulation, the κ hardly depend on the compositional distribution, indicating the impact of the difference in the RMG processes.

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Thermoelectric Characteristics of Rapid-Melting-Grown SiGe Wires Measured by Peltier Cooling Experiment

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