Thick and large area PIN diodes for hard X-ray astronomy

N. Ota; T. Murakami; M. Sugizaki; M. Kaneda; T. Tamura; H. Ozawa; T. Kamae; K. Makishima; T. Takahashi; M. Tashiro; Y. Fukazawa; J. Kataoka; K. Yamaoka; S. Kubo; C. Tanihata; Y. Uchiyama; K. Matsuzaki; N. Iyomoto; M. Kokubun; T. Nakazawa; A. Kubota; T. Mizuno; Y. Matsumoto; N. Isobe; Y. Terada; M. Sugiho; T. Onishi; H. Kubo; H. Ikeda; M. Nomachi; T. Ohsugi; M. Muramatsu; H. Akahori

doi:10.1016/S0168-9002(99)00636-1

Thick and large area PIN diodes for hard X-ray astronomy

N. Ota^*, T. Murakami, M. Sugizaki, M. Kaneda, T. Tamura, H. Ozawa, T. Kamae, K. Makishima, T. Takahashi, M. Tashiro, Y. Fukazawa, J. Kataoka, K. Yamaoka, S. Kubo, C. Tanihata, Y. Uchiyama, K. Matsuzaki, N. Iyomoto, M. Kokubun, T. NakazawaA. Kubota, T. Mizuno, Y. Matsumoto, N. Isobe, Y. Terada, M. Sugiho, T. Onishi, H. Kubo, H. Ikeda, M. Nomachi, T. Ohsugi, M. Muramatsu, H. Akahori

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

14 Citations (Scopus)

Abstract

Thick and large area PIN diodes for the hard X-ray astronomy in the 10-60 keV range are developed. To cover this energy range in a room temperature and in a low background environment, Si PIN junction diodes of 2 mm in thickness with 2.5 cm² in effective area were developed, and will be used in the bottom of the Phoswich Hard X-ray Detector (HXD), on-board the ASTRO-E satellite. Problems related to a high purity Si and a thick depletion layer during our development and performance of the PIN diodes are presented in detail.

Original language	English
Pages (from-to)	291-296
Number of pages	6
Journal	Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume	436
Issue number	1-2
DOIs	https://doi.org/10.1016/S0168-9002(99)00636-1
Publication status	Published - 1999 Oct 21
Externally published	Yes
Event	Proceedings of the 1998 7th International Conference on Solid State Detectors - Nara, Jpn Duration: 1998 Dec 4 → 1998 Dec 6

ASJC Scopus subject areas

Nuclear and High Energy Physics
Instrumentation

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Ota, N., Murakami, T., Sugizaki, M., Kaneda, M., Tamura, T., Ozawa, H., Kamae, T., Makishima, K., Takahashi, T., Tashiro, M., Fukazawa, Y., Kataoka, J., Yamaoka, K., Kubo, S., Tanihata, C., Uchiyama, Y., Matsuzaki, K., Iyomoto, N., Kokubun, M., ... Akahori, H. (1999). Thick and large area PIN diodes for hard X-ray astronomy. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 436(1-2), 291-296. https://doi.org/10.1016/S0168-9002(99)00636-1

Ota, N, Murakami, T, Sugizaki, M, Kaneda, M, Tamura, T, Ozawa, H, Kamae, T, Makishima, K, Takahashi, T, Tashiro, M, Fukazawa, Y, Kataoka, J, Yamaoka, K, Kubo, S, Tanihata, C, Uchiyama, Y, Matsuzaki, K, Iyomoto, N, Kokubun, M, Nakazawa, T, Kubota, A, Mizuno, T, Matsumoto, Y, Isobe, N, Terada, Y, Sugiho, M, Onishi, T, Kubo, H, Ikeda, H, Nomachi, M, Ohsugi, T, Muramatsu, M & Akahori, H 1999, 'Thick and large area PIN diodes for hard X-ray astronomy', Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, vol. 436, no. 1-2, pp. 291-296. https://doi.org/10.1016/S0168-9002(99)00636-1

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title = "Thick and large area PIN diodes for hard X-ray astronomy",

abstract = "Thick and large area PIN diodes for the hard X-ray astronomy in the 10-60 keV range are developed. To cover this energy range in a room temperature and in a low background environment, Si PIN junction diodes of 2 mm in thickness with 2.5 cm2 in effective area were developed, and will be used in the bottom of the Phoswich Hard X-ray Detector (HXD), on-board the ASTRO-E satellite. Problems related to a high purity Si and a thick depletion layer during our development and performance of the PIN diodes are presented in detail.",

author = "N. Ota and T. Murakami and M. Sugizaki and M. Kaneda and T. Tamura and H. Ozawa and T. Kamae and K. Makishima and T. Takahashi and M. Tashiro and Y. Fukazawa and J. Kataoka and K. Yamaoka and S. Kubo and C. Tanihata and Y. Uchiyama and K. Matsuzaki and N. Iyomoto and M. Kokubun and T. Nakazawa and A. Kubota and T. Mizuno and Y. Matsumoto and N. Isobe and Y. Terada and M. Sugiho and T. Onishi and H. Kubo and H. Ikeda and M. Nomachi and T. Ohsugi and M. Muramatsu and H. Akahori",

year = "1999",

month = oct,

day = "21",

doi = "10.1016/S0168-9002(99)00636-1",

language = "English",

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T1 - Thick and large area PIN diodes for hard X-ray astronomy

AU - Ota, N.

AU - Murakami, T.

AU - Sugizaki, M.

AU - Kaneda, M.

AU - Tamura, T.

AU - Ozawa, H.

AU - Kamae, T.

AU - Makishima, K.

AU - Takahashi, T.

AU - Tashiro, M.

AU - Fukazawa, Y.

AU - Kataoka, J.

AU - Yamaoka, K.

AU - Kubo, S.

AU - Tanihata, C.

AU - Uchiyama, Y.

AU - Matsuzaki, K.

AU - Iyomoto, N.

AU - Kokubun, M.

AU - Nakazawa, T.

AU - Kubota, A.

AU - Mizuno, T.

AU - Matsumoto, Y.

AU - Isobe, N.

AU - Terada, Y.

AU - Sugiho, M.

AU - Onishi, T.

AU - Kubo, H.

AU - Ikeda, H.

AU - Nomachi, M.

AU - Ohsugi, T.

AU - Muramatsu, M.

AU - Akahori, H.

PY - 1999/10/21

Y1 - 1999/10/21

N2 - Thick and large area PIN diodes for the hard X-ray astronomy in the 10-60 keV range are developed. To cover this energy range in a room temperature and in a low background environment, Si PIN junction diodes of 2 mm in thickness with 2.5 cm2 in effective area were developed, and will be used in the bottom of the Phoswich Hard X-ray Detector (HXD), on-board the ASTRO-E satellite. Problems related to a high purity Si and a thick depletion layer during our development and performance of the PIN diodes are presented in detail.

AB - Thick and large area PIN diodes for the hard X-ray astronomy in the 10-60 keV range are developed. To cover this energy range in a room temperature and in a low background environment, Si PIN junction diodes of 2 mm in thickness with 2.5 cm2 in effective area were developed, and will be used in the bottom of the Phoswich Hard X-ray Detector (HXD), on-board the ASTRO-E satellite. Problems related to a high purity Si and a thick depletion layer during our development and performance of the PIN diodes are presented in detail.

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DO - 10.1016/S0168-9002(99)00636-1

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AN - SCOPUS:0343496826

SN - 0168-9002

VL - 436

SP - 291

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JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

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T2 - Proceedings of the 1998 7th International Conference on Solid State Detectors

Y2 - 4 December 1998 through 6 December 1998

ER -

Thick and large area PIN diodes for hard X-ray astronomy

Abstract

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