Thickness control of 3-dimensional mesoporous silica ultrathin films by wet-etching

Maho Kobayashi; Kyoka Susuki; Tomohiro Otani; Shinpei Enomoto; Haruo Otsuji; Yoshiyuki Kuroda; Hiroaki Wada; Atsushi Shimojima; Takayuki Homma; Kazuyuki Kuroda

doi:10.1039/c7nr01560g

Thickness control of 3-dimensional mesoporous silica ultrathin films by wet-etching

Maho Kobayashi, Kyoka Susuki, Tomohiro Otani, Shinpei Enomoto, Haruo Otsuji, Yoshiyuki Kuroda, Hiroaki Wada, Atsushi Shimojima, Takayuki Homma, Kazuyuki Kuroda^*

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

The thickness of 3-dimensional (3D) mesoporous silica ultrathin films was controlled at a single-nanometer scale by wet-etching. A drop casting method with an aqueous etchant of ammonium fluoride was effective in etching the surfaces of films in the direction perpendicular to their substrates. The decrease in the film thickness depends on the interface tension of etching solutions. The wettability of thin films also influences the etching. CoPt nanodots were electrodeposited within ultrathin silica films on Ru substrates to form CoPt nanodot patterns.

Original language	English
Pages (from-to)	8321-8329
Number of pages	9
Journal	Nanoscale
Volume	9
Issue number	24
DOIs	https://doi.org/10.1039/c7nr01560g
Publication status	Published - 2017 Jun 28

ASJC Scopus subject areas

Materials Science(all)

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title = "Thickness control of 3-dimensional mesoporous silica ultrathin films by wet-etching",

abstract = "The thickness of 3-dimensional (3D) mesoporous silica ultrathin films was controlled at a single-nanometer scale by wet-etching. A drop casting method with an aqueous etchant of ammonium fluoride was effective in etching the surfaces of films in the direction perpendicular to their substrates. The decrease in the film thickness depends on the interface tension of etching solutions. The wettability of thin films also influences the etching. CoPt nanodots were electrodeposited within ultrathin silica films on Ru substrates to form CoPt nanodot patterns.",

author = "Maho Kobayashi and Kyoka Susuki and Tomohiro Otani and Shinpei Enomoto and Haruo Otsuji and Yoshiyuki Kuroda and Hiroaki Wada and Atsushi Shimojima and Takayuki Homma and Kazuyuki Kuroda",

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AU - Kobayashi, Maho

AU - Susuki, Kyoka

AU - Otani, Tomohiro

AU - Enomoto, Shinpei

AU - Otsuji, Haruo

AU - Kuroda, Yoshiyuki

AU - Wada, Hiroaki

AU - Shimojima, Atsushi

AU - Homma, Takayuki

AU - Kuroda, Kazuyuki

PY - 2017/6/28

Y1 - 2017/6/28

N2 - The thickness of 3-dimensional (3D) mesoporous silica ultrathin films was controlled at a single-nanometer scale by wet-etching. A drop casting method with an aqueous etchant of ammonium fluoride was effective in etching the surfaces of films in the direction perpendicular to their substrates. The decrease in the film thickness depends on the interface tension of etching solutions. The wettability of thin films also influences the etching. CoPt nanodots were electrodeposited within ultrathin silica films on Ru substrates to form CoPt nanodot patterns.

AB - The thickness of 3-dimensional (3D) mesoporous silica ultrathin films was controlled at a single-nanometer scale by wet-etching. A drop casting method with an aqueous etchant of ammonium fluoride was effective in etching the surfaces of films in the direction perpendicular to their substrates. The decrease in the film thickness depends on the interface tension of etching solutions. The wettability of thin films also influences the etching. CoPt nanodots were electrodeposited within ultrathin silica films on Ru substrates to form CoPt nanodot patterns.

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Thickness control of 3-dimensional mesoporous silica ultrathin films by wet-etching

Abstract

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