Thickness-dependent power-law of dielectric breakdown in ultrathin NMOS gate oxides

A. Hiraiwa; D. Ishikawa

doi:10.1016/j.mee.2005.04.094

Thickness-dependent power-law of dielectric breakdown in ultrathin NMOS gate oxides

A. Hiraiwa^*, D. Ishikawa

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

We experimentally investigated the breakdown lifetime of NMOS under inversion condition as a function of gate voltage by long-time-span tests and new power-law criteria. The lifetime followed the 1/E-rule above ∼4 V, but the power-law below ∼4 V. The power index decreased when the oxide became thinner. We observed no trace of the E-rule. We propose to adopt the powerlaw and the 1/E-rule in the reliability projection of core and I/O oxides, respectively. We need to appropriately consider the direct tunneling to model the breakdown below ∼4 V. The hole injection still seems to be playing an important role.

Original language	English
Pages (from-to)	374-377
Number of pages	4
Journal	Microelectronic Engineering
Volume	80
Issue number	SUPPL.
DOIs	https://doi.org/10.1016/j.mee.2005.04.094
Publication status	Published - 2005 Jun 17
Externally published	Yes

Keywords

1/E-rule
Breakdown
Hole
Inversion
NMOS
Oxide
Power-law

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Surfaces, Coatings and Films
Atomic and Molecular Physics, and Optics

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10.1016/j.mee.2005.04.094

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title = "Thickness-dependent power-law of dielectric breakdown in ultrathin NMOS gate oxides",

abstract = "We experimentally investigated the breakdown lifetime of NMOS under inversion condition as a function of gate voltage by long-time-span tests and new power-law criteria. The lifetime followed the 1/E-rule above ∼4 V, but the power-law below ∼4 V. The power index decreased when the oxide became thinner. We observed no trace of the E-rule. We propose to adopt the powerlaw and the 1/E-rule in the reliability projection of core and I/O oxides, respectively. We need to appropriately consider the direct tunneling to model the breakdown below ∼4 V. The hole injection still seems to be playing an important role.",

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T1 - Thickness-dependent power-law of dielectric breakdown in ultrathin NMOS gate oxides

AU - Hiraiwa, A.

AU - Ishikawa, D.

PY - 2005/6/17

Y1 - 2005/6/17

N2 - We experimentally investigated the breakdown lifetime of NMOS under inversion condition as a function of gate voltage by long-time-span tests and new power-law criteria. The lifetime followed the 1/E-rule above ∼4 V, but the power-law below ∼4 V. The power index decreased when the oxide became thinner. We observed no trace of the E-rule. We propose to adopt the powerlaw and the 1/E-rule in the reliability projection of core and I/O oxides, respectively. We need to appropriately consider the direct tunneling to model the breakdown below ∼4 V. The hole injection still seems to be playing an important role.

AB - We experimentally investigated the breakdown lifetime of NMOS under inversion condition as a function of gate voltage by long-time-span tests and new power-law criteria. The lifetime followed the 1/E-rule above ∼4 V, but the power-law below ∼4 V. The power index decreased when the oxide became thinner. We observed no trace of the E-rule. We propose to adopt the powerlaw and the 1/E-rule in the reliability projection of core and I/O oxides, respectively. We need to appropriately consider the direct tunneling to model the breakdown below ∼4 V. The hole injection still seems to be playing an important role.

KW - 1/E-rule

KW - Breakdown

KW - Hole

KW - Inversion

KW - NMOS

KW - Oxide

KW - Power-law

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U2 - 10.1016/j.mee.2005.04.094

DO - 10.1016/j.mee.2005.04.094

M3 - Article

AN - SCOPUS:19944403937

SN - 0167-9317

VL - 80

SP - 374

EP - 377

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - SUPPL.

ER -

Thickness-dependent power-law of dielectric breakdown in ultrathin NMOS gate oxides

Abstract

Keywords

ASJC Scopus subject areas

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