Thickness-dependent power-law of dielectric breakdown in ultrathin NMOS gate oxides

A. Hiraiwa*, D. Ishikawa

*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Fingerprint

Dive into the research topics of 'Thickness-dependent power-law of dielectric breakdown in ultrathin NMOS gate oxides'. Together they form a unique fingerprint.

Physics & Astronomy

Chemical Compounds

Engineering & Materials Science