Threading dislocation reduction in InP/GaAs by thin strained interlayer and its application to the fabrication of 1.3 μm wavelength laser on GaAs

Yae Okuno; Toshihiro Kawano; Tomonobu Tsuchiya; Tsuyoshi Taniwatari

Threading dislocation reduction in InP/GaAs by thin strained interlayer and its application to the fabrication of 1.3 μm wavelength laser on GaAs

Yae Okuno^*, Toshihiro Kawano, Tomonobu Tsuchiya, Tsuyoshi Taniwatari

^*Corresponding author for this work

Research output: Contribution to conference › Paper › peer-review

1 Citation (Scopus)

Abstract

This paper examines the reduction of threading dislocation by a thin strained interlayer (SIL), and long-wavelength lasers fabricated on a GaAs substrate with SILs. Cross-sectional transmission electron microscope (TEM) is used to observe the dislocation blocking ability of a InGaP SIL inserted in an InP layer grown on a GaAs substrate. The characteristics of the lasers are improved due to dislocation reduction. Their threshold current is reduced to 70% on average and is also distributed more uniformly.

Original language	English
Pages	610-612
Number of pages	3
Publication status	Published - 1992 Dec 1
Externally published	Yes
Event	Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn Duration: 1992 Aug 26 → 1992 Aug 28

Other

Other	Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92
City	Tsukuba, Jpn
Period	92/8/26 → 92/8/28

ASJC Scopus subject areas

Engineering(all)

Cite this

Threading dislocation reduction in InP/GaAs by thin strained interlayer and its application to the fabrication of 1.3 μm wavelength laser on GaAs. / Okuno, Yae; Kawano, Toshihiro; Tsuchiya, Tomonobu et al.
1992. 610-612 Paper presented at Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92, Tsukuba, Jpn.

Research output: Contribution to conference › Paper › peer-review

Okuno, Y, Kawano, T, Tsuchiya, T & Taniwatari, T 1992, 'Threading dislocation reduction in InP/GaAs by thin strained interlayer and its application to the fabrication of 1.3 μm wavelength laser on GaAs', Paper presented at Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92, Tsukuba, Jpn, 92/8/26 - 92/8/28 pp. 610-612.

@conference{d4ac4f33be8446eeb7467f4c74a73d3c,

title = "Threading dislocation reduction in InP/GaAs by thin strained interlayer and its application to the fabrication of 1.3 μm wavelength laser on GaAs",

abstract = "This paper examines the reduction of threading dislocation by a thin strained interlayer (SIL), and long-wavelength lasers fabricated on a GaAs substrate with SILs. Cross-sectional transmission electron microscope (TEM) is used to observe the dislocation blocking ability of a InGaP SIL inserted in an InP layer grown on a GaAs substrate. The characteristics of the lasers are improved due to dislocation reduction. Their threshold current is reduced to 70% on average and is also distributed more uniformly.",

author = "Yae Okuno and Toshihiro Kawano and Tomonobu Tsuchiya and Tsuyoshi Taniwatari",

year = "1992",

month = dec,

day = "1",

language = "English",

pages = "610--612",

note = "Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 ; Conference date: 26-08-1992 Through 28-08-1992",

}

TY - CONF

T1 - Threading dislocation reduction in InP/GaAs by thin strained interlayer and its application to the fabrication of 1.3 μm wavelength laser on GaAs

AU - Okuno, Yae

AU - Kawano, Toshihiro

AU - Tsuchiya, Tomonobu

AU - Taniwatari, Tsuyoshi

PY - 1992/12/1

Y1 - 1992/12/1

N2 - This paper examines the reduction of threading dislocation by a thin strained interlayer (SIL), and long-wavelength lasers fabricated on a GaAs substrate with SILs. Cross-sectional transmission electron microscope (TEM) is used to observe the dislocation blocking ability of a InGaP SIL inserted in an InP layer grown on a GaAs substrate. The characteristics of the lasers are improved due to dislocation reduction. Their threshold current is reduced to 70% on average and is also distributed more uniformly.

AB - This paper examines the reduction of threading dislocation by a thin strained interlayer (SIL), and long-wavelength lasers fabricated on a GaAs substrate with SILs. Cross-sectional transmission electron microscope (TEM) is used to observe the dislocation blocking ability of a InGaP SIL inserted in an InP layer grown on a GaAs substrate. The characteristics of the lasers are improved due to dislocation reduction. Their threshold current is reduced to 70% on average and is also distributed more uniformly.

UR - http://www.scopus.com/inward/record.url?scp=0027004802&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0027004802&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0027004802

SP - 610

EP - 612

T2 - Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92

Y2 - 26 August 1992 through 28 August 1992

ER -

Threading dislocation reduction in InP/GaAs by thin strained interlayer and its application to the fabrication of 1.3 μm wavelength laser on GaAs

Abstract

Other

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this