THREE DIMENSIONAL LEAKAGE CURRENT IN CORRUGATED CAPACITOR CELLS.

Eiji Takeda; Kan Takeuchi; Atsushi Hiraiwa; Toru Toyabe; Hideo Sunami; Kiyoo Itoh

THREE DIMENSIONAL LEAKAGE CURRENT IN CORRUGATED CAPACITOR CELLS.

Eiji Takeda^*, Kan Takeuchi, Atsushi Hiraiwa, Toru Toyabe, Hideo Sunami, Kiyoo Itoh

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The mechanism of three-dimensional leakage current in a corrugated capacitor cell for megabit DRAMs has been clarified both experimentally and theoretically using a 3-D device simulator (CADDETH). This study shows that this current is almost completely defined by using the minimum value of the potential barrier height between cells. This is the case even if there is a complicated potential form due to three-dimensional effects and/or sophisticated device structures. Furthermore, the three-dimensional effects in the leakage current caused by back bias penetration are discussed in detail. On the basis of these results, significant guidelines are proposed for trench capacitor cells.

Original language	English
Title of host publication	Conference on Solid State Devices and Materials
Place of Publication	Tokyo, Jpn
Publisher	Japan Soc of Applied Physics
Pages	37-40
Number of pages	4
ISBN (Print)	4930813107
Publication status	Published - 1985
Externally published	Yes

ASJC Scopus subject areas

Engineering(all)

Cite this

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title = "THREE DIMENSIONAL LEAKAGE CURRENT IN CORRUGATED CAPACITOR CELLS.",

abstract = "The mechanism of three-dimensional leakage current in a corrugated capacitor cell for megabit DRAMs has been clarified both experimentally and theoretically using a 3-D device simulator (CADDETH). This study shows that this current is almost completely defined by using the minimum value of the potential barrier height between cells. This is the case even if there is a complicated potential form due to three-dimensional effects and/or sophisticated device structures. Furthermore, the three-dimensional effects in the leakage current caused by back bias penetration are discussed in detail. On the basis of these results, significant guidelines are proposed for trench capacitor cells.",

author = "Eiji Takeda and Kan Takeuchi and Atsushi Hiraiwa and Toru Toyabe and Hideo Sunami and Kiyoo Itoh",

year = "1985",

language = "English",

isbn = "4930813107",

pages = "37--40",

booktitle = "Conference on Solid State Devices and Materials",

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T1 - THREE DIMENSIONAL LEAKAGE CURRENT IN CORRUGATED CAPACITOR CELLS.

AU - Takeda, Eiji

AU - Takeuchi, Kan

AU - Hiraiwa, Atsushi

AU - Toyabe, Toru

AU - Sunami, Hideo

AU - Itoh, Kiyoo

PY - 1985

Y1 - 1985

N2 - The mechanism of three-dimensional leakage current in a corrugated capacitor cell for megabit DRAMs has been clarified both experimentally and theoretically using a 3-D device simulator (CADDETH). This study shows that this current is almost completely defined by using the minimum value of the potential barrier height between cells. This is the case even if there is a complicated potential form due to three-dimensional effects and/or sophisticated device structures. Furthermore, the three-dimensional effects in the leakage current caused by back bias penetration are discussed in detail. On the basis of these results, significant guidelines are proposed for trench capacitor cells.

AB - The mechanism of three-dimensional leakage current in a corrugated capacitor cell for megabit DRAMs has been clarified both experimentally and theoretically using a 3-D device simulator (CADDETH). This study shows that this current is almost completely defined by using the minimum value of the potential barrier height between cells. This is the case even if there is a complicated potential form due to three-dimensional effects and/or sophisticated device structures. Furthermore, the three-dimensional effects in the leakage current caused by back bias penetration are discussed in detail. On the basis of these results, significant guidelines are proposed for trench capacitor cells.

UR - http://www.scopus.com/inward/record.url?scp=0022246693&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0022246693&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0022246693

SN - 4930813107

SP - 37

EP - 40

BT - Conference on Solid State Devices and Materials

PB - Japan Soc of Applied Physics

CY - Tokyo, Jpn

ER -

THREE DIMENSIONAL LEAKAGE CURRENT IN CORRUGATED CAPACITOR CELLS.

Abstract

ASJC Scopus subject areas

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