Time-resolved electroluminescence study of green light-emitting diode

T. Kuroda; N. Horio; K. Taniguchi; H. Sato; C. Funaoka; A. Tackeuchi

doi:10.1002/pssc.200390038

Time-resolved electroluminescence study of green light-emitting diode

T. Kuroda^*, N. Horio, K. Taniguchi, H. Sato, C. Funaoka, A. Tackeuchi

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

We have performed time-resolved photoluminescence and electroluminescence measurements for an InGaN quantum well at 300 K to investigate the carrier dynamics. Electroluminescence measurement yields more direct information of the carrier dynamics of device operation, because carriers are generated by current injection in optoelectronic devices. The time evolution of EL spectra indicates that spatial indium fluctuations become significant with increasing In content in nitride-based optoelectronic applications.

Original language	English
Pages (from-to)	25-28
Number of pages	4
Journal	Physica Status Solidi C: Conferences
Issue number	1
DOIs	https://doi.org/10.1002/pssc.200390038
Publication status	Published - 2002 Dec 1
Event	2nd International Workshop on Nitride Semiconductors, IWN 2002 - Aachen, Germany Duration: 2002 Jul 22 → 2002 Jul 25

ASJC Scopus subject areas

Condensed Matter Physics

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10.1002/pssc.200390038

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title = "Time-resolved electroluminescence study of green light-emitting diode",

abstract = "We have performed time-resolved photoluminescence and electroluminescence measurements for an InGaN quantum well at 300 K to investigate the carrier dynamics. Electroluminescence measurement yields more direct information of the carrier dynamics of device operation, because carriers are generated by current injection in optoelectronic devices. The time evolution of EL spectra indicates that spatial indium fluctuations become significant with increasing In content in nitride-based optoelectronic applications.",

author = "T. Kuroda and N. Horio and K. Taniguchi and H. Sato and C. Funaoka and A. Tackeuchi",

year = "2002",

month = dec,

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doi = "10.1002/pssc.200390038",

language = "English",

pages = "25--28",

journal = "Physica Status Solidi C: Conferences",

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T1 - Time-resolved electroluminescence study of green light-emitting diode

AU - Kuroda, T.

AU - Horio, N.

AU - Taniguchi, K.

AU - Sato, H.

AU - Funaoka, C.

AU - Tackeuchi, A.

PY - 2002/12/1

Y1 - 2002/12/1

N2 - We have performed time-resolved photoluminescence and electroluminescence measurements for an InGaN quantum well at 300 K to investigate the carrier dynamics. Electroluminescence measurement yields more direct information of the carrier dynamics of device operation, because carriers are generated by current injection in optoelectronic devices. The time evolution of EL spectra indicates that spatial indium fluctuations become significant with increasing In content in nitride-based optoelectronic applications.

AB - We have performed time-resolved photoluminescence and electroluminescence measurements for an InGaN quantum well at 300 K to investigate the carrier dynamics. Electroluminescence measurement yields more direct information of the carrier dynamics of device operation, because carriers are generated by current injection in optoelectronic devices. The time evolution of EL spectra indicates that spatial indium fluctuations become significant with increasing In content in nitride-based optoelectronic applications.

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U2 - 10.1002/pssc.200390038

DO - 10.1002/pssc.200390038

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JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

IS - 1

T2 - 2nd International Workshop on Nitride Semiconductors, IWN 2002

Y2 - 22 July 2002 through 25 July 2002

ER -

Time-resolved electroluminescence study of green light-emitting diode

Abstract

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