Time-resolved photoluminescence measurement of exciton and biexciton in an InAs/GaAs single quantum dot

Shunsuke Kono; Akihiro Kirihara; Akihisa Tomita; Kazuo Nakamura; Kenichi Nishi; Hideaki Saito; Junichi Fujikata; Keishi Ohashi

doi:10.1109/IQEC.2005.1560877

Time-resolved photoluminescence measurement of exciton and biexciton in an InAs/GaAs single quantum dot

Shunsuke Kono^*, Akihiro Kirihara, Akihisa Tomita, Kazuo Nakamura, Kenichi Nishi, Hideaki Saito, Junichi Fujikata, Keishi Ohashi

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Dynamical behaviors of the exciton and biexciton luminescence at the wavelength of 1.18 μ from an InAs/GaAs single quantum dot are studied at 4.3 K. The rate equation analysis on the luminescence decays shows that the biexciton lifetime is longer than the exciton lifetime. The estimated lifetimes reflect molecular nature of the biexciton in the single quantum dot.

Original language	English
Title of host publication	International Quantum Electronics Conference 2005
Pages	259-260
Number of pages	2
DOIs	https://doi.org/10.1109/IQEC.2005.1560877
Publication status	Published - 2005
Externally published	Yes

Publication series

Name	IQEC, International Quantum Electronics Conference Proceedings
Volume	2005

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1109/IQEC.2005.1560877

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Kono, S., Kirihara, A., Tomita, A., Nakamura, K., Nishi, K., Saito, H., Fujikata, J., & Ohashi, K. (2005). Time-resolved photoluminescence measurement of exciton and biexciton in an InAs/GaAs single quantum dot. In International Quantum Electronics Conference 2005 (pp. 259-260). Article 1560877 (IQEC, International Quantum Electronics Conference Proceedings; Vol. 2005). https://doi.org/10.1109/IQEC.2005.1560877

Time-resolved photoluminescence measurement of exciton and biexciton in an InAs/GaAs single quantum dot. / Kono, Shunsuke; Kirihara, Akihiro; Tomita, Akihisa et al.
International Quantum Electronics Conference 2005. 2005. p. 259-260 1560877 (IQEC, International Quantum Electronics Conference Proceedings; Vol. 2005).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kono, S, Kirihara, A, Tomita, A, Nakamura, K, Nishi, K, Saito, H, Fujikata, J & Ohashi, K 2005, Time-resolved photoluminescence measurement of exciton and biexciton in an InAs/GaAs single quantum dot. in International Quantum Electronics Conference 2005., 1560877, IQEC, International Quantum Electronics Conference Proceedings, vol. 2005, pp. 259-260. https://doi.org/10.1109/IQEC.2005.1560877

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title = "Time-resolved photoluminescence measurement of exciton and biexciton in an InAs/GaAs single quantum dot",

abstract = "Dynamical behaviors of the exciton and biexciton luminescence at the wavelength of 1.18 μ from an InAs/GaAs single quantum dot are studied at 4.3 K. The rate equation analysis on the luminescence decays shows that the biexciton lifetime is longer than the exciton lifetime. The estimated lifetimes reflect molecular nature of the biexciton in the single quantum dot.",

author = "Shunsuke Kono and Akihiro Kirihara and Akihisa Tomita and Kazuo Nakamura and Kenichi Nishi and Hideaki Saito and Junichi Fujikata and Keishi Ohashi",

year = "2005",

doi = "10.1109/IQEC.2005.1560877",

language = "English",

isbn = "078039240X",

series = "IQEC, International Quantum Electronics Conference Proceedings",

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AU - Kono, Shunsuke

AU - Kirihara, Akihiro

AU - Tomita, Akihisa

AU - Nakamura, Kazuo

AU - Nishi, Kenichi

AU - Saito, Hideaki

AU - Fujikata, Junichi

AU - Ohashi, Keishi

PY - 2005

Y1 - 2005

N2 - Dynamical behaviors of the exciton and biexciton luminescence at the wavelength of 1.18 μ from an InAs/GaAs single quantum dot are studied at 4.3 K. The rate equation analysis on the luminescence decays shows that the biexciton lifetime is longer than the exciton lifetime. The estimated lifetimes reflect molecular nature of the biexciton in the single quantum dot.

AB - Dynamical behaviors of the exciton and biexciton luminescence at the wavelength of 1.18 μ from an InAs/GaAs single quantum dot are studied at 4.3 K. The rate equation analysis on the luminescence decays shows that the biexciton lifetime is longer than the exciton lifetime. The estimated lifetimes reflect molecular nature of the biexciton in the single quantum dot.

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T3 - IQEC, International Quantum Electronics Conference Proceedings

SP - 259

EP - 260

BT - International Quantum Electronics Conference 2005

ER -

Time-resolved photoluminescence measurement of exciton and biexciton in an InAs/GaAs single quantum dot

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