Time-resolved ultraviolet photoluminescence of ZnO/ZnGa2O 4 composite layer

Qing Yang; Xiaohong Zhou; Takao Nukui; Yu Saeki; Sotaro Izumi; Atsushi Tackeuchi; Hirokazu Tatsuoka; Shuhua Liang

doi:10.1063/1.4864750

Time-resolved ultraviolet photoluminescence of ZnO/ZnGa₂O ₄ composite layer

Qing Yang^*, Xiaohong Zhou, Takao Nukui, Yu Saeki, Sotaro Izumi, Atsushi Tackeuchi, Hirokazu Tatsuoka, Shuhua Liang

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

The ultraviolet photoluminescence of ZnO/ZnGa₂O₄ composite layer grown by the thermal oxidation of ZnS with gallium was investigated by the time-resolved photoluminescence as a function of measuring temperature and excitation power. With increase of excitation power, the D ⁰X emission is easily saturated than the DAP emission from ZnO/ZnGa₂O₄ composite layer, and which is dramatically enhanced as compared with that from pure ZnO layer grown without gallium. The radiative recombination process with ultra-long lifetime controlled the carrier recombination of ZnO/ZnGa₂O₄ composite layer.

Original language	English
Article number	027101
Journal	AIP Advances
Volume	4
Issue number	2
DOIs	https://doi.org/10.1063/1.4864750
Publication status	Published - 2014 Feb

ASJC Scopus subject areas

Physics and Astronomy(all)

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title = "Time-resolved ultraviolet photoluminescence of ZnO/ZnGa2O 4 composite layer",

abstract = "The ultraviolet photoluminescence of ZnO/ZnGa2O4 composite layer grown by the thermal oxidation of ZnS with gallium was investigated by the time-resolved photoluminescence as a function of measuring temperature and excitation power. With increase of excitation power, the D 0X emission is easily saturated than the DAP emission from ZnO/ZnGa2O4 composite layer, and which is dramatically enhanced as compared with that from pure ZnO layer grown without gallium. The radiative recombination process with ultra-long lifetime controlled the carrier recombination of ZnO/ZnGa2O4 composite layer.",

author = "Qing Yang and Xiaohong Zhou and Takao Nukui and Yu Saeki and Sotaro Izumi and Atsushi Tackeuchi and Hirokazu Tatsuoka and Shuhua Liang",

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doi = "10.1063/1.4864750",

language = "English",

volume = "4",

journal = "AIP Advances",

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T1 - Time-resolved ultraviolet photoluminescence of ZnO/ZnGa2O 4 composite layer

AU - Yang, Qing

AU - Zhou, Xiaohong

AU - Nukui, Takao

AU - Saeki, Yu

AU - Izumi, Sotaro

AU - Tackeuchi, Atsushi

AU - Tatsuoka, Hirokazu

AU - Liang, Shuhua

PY - 2014/2

Y1 - 2014/2

N2 - The ultraviolet photoluminescence of ZnO/ZnGa2O4 composite layer grown by the thermal oxidation of ZnS with gallium was investigated by the time-resolved photoluminescence as a function of measuring temperature and excitation power. With increase of excitation power, the D 0X emission is easily saturated than the DAP emission from ZnO/ZnGa2O4 composite layer, and which is dramatically enhanced as compared with that from pure ZnO layer grown without gallium. The radiative recombination process with ultra-long lifetime controlled the carrier recombination of ZnO/ZnGa2O4 composite layer.

AB - The ultraviolet photoluminescence of ZnO/ZnGa2O4 composite layer grown by the thermal oxidation of ZnS with gallium was investigated by the time-resolved photoluminescence as a function of measuring temperature and excitation power. With increase of excitation power, the D 0X emission is easily saturated than the DAP emission from ZnO/ZnGa2O4 composite layer, and which is dramatically enhanced as compared with that from pure ZnO layer grown without gallium. The radiative recombination process with ultra-long lifetime controlled the carrier recombination of ZnO/ZnGa2O4 composite layer.

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DO - 10.1063/1.4864750

M3 - Article

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VL - 4

JO - AIP Advances

JF - AIP Advances

IS - 2

M1 - 027101

ER -

Time-resolved ultraviolet photoluminescence of ZnO/ZnGa₂O ₄ composite layer

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