TY - GEN
T1 - Top-seeded solution growth of 3 inch diameter 4H-SiC bulk crystal using metal solvents
AU - Kusunoki, K.
AU - Kamei, K.
AU - Okada, N.
AU - Moriguchi, K.
AU - Kaido, H.
AU - Daikoku, H.
AU - Kado, M.
AU - Danno, K.
AU - Sakamoto, H.
AU - Bessho, T.
AU - Ujihara, T.
PY - 2014
Y1 - 2014
N2 - We performed top-seeded solution growth of 4H-SiC for obtaining longer length crystal. Si-Cr and Si-Ti melts were used as solvents. Meniscus formation technique was applied to the present study. Special attention was paid to improve the process stability during long-term growth. One of major technological problems in the solution growth is that the precipitation of polycrystalline SiC which hiders the stable single crystal growth. Another problem is the fluctuation of supersaturation at the growth interface during the growth. Through the optimization of growth process conditions, we have successfully grown 4H-SiC single crystals up to 14 mm long with three-inch-diameter, and evaluated their crystalline quality.
AB - We performed top-seeded solution growth of 4H-SiC for obtaining longer length crystal. Si-Cr and Si-Ti melts were used as solvents. Meniscus formation technique was applied to the present study. Special attention was paid to improve the process stability during long-term growth. One of major technological problems in the solution growth is that the precipitation of polycrystalline SiC which hiders the stable single crystal growth. Another problem is the fluctuation of supersaturation at the growth interface during the growth. Through the optimization of growth process conditions, we have successfully grown 4H-SiC single crystals up to 14 mm long with three-inch-diameter, and evaluated their crystalline quality.
KW - 3-inch diameter
KW - 4H-SiC
KW - Meniscus formation technique
KW - Metal solvent
KW - Top-seeded solution growth
UR - http://www.scopus.com/inward/record.url?scp=84896074034&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84896074034&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/MSF.778-780.79
DO - 10.4028/www.scientific.net/MSF.778-780.79
M3 - Conference contribution
AN - SCOPUS:84896074034
SN - 9783038350101
VL - 778-780
T3 - Materials Science Forum
SP - 79
EP - 82
BT - Materials Science Forum
PB - Trans Tech Publications Ltd
T2 - 15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013
Y2 - 29 September 2013 through 4 October 2013
ER -