Top-seeded solution growth of three-inch-diameter 4H-SiC using convection control technique

Kazuhiko Kusunoki; Nobuhiro Okada; Kazuhito Kamei; Koji Moriguchi; Hironori Daikoku; Motohisa Kado; Hidemitsu Sakamoto; Takeshi Bessho; Toru Ujihara

doi:10.1016/j.jcrysgro.2014.03.006

Top-seeded solution growth of three-inch-diameter 4H-SiC using convection control technique

Kazuhiko Kusunoki^*, Nobuhiro Okada, Kazuhito Kamei, Koji Moriguchi, Hironori Daikoku, Motohisa Kado, Hidemitsu Sakamoto, Takeshi Bessho, Toru Ujihara

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

55 Citations (Scopus)

Abstract

The top-seeded solution growth of 4H-SiC at three inches in diameter has been investigated using Si-Ti alloy as a solvent. A perforated graphite disk called "immersion guide" (IG) was positioned in the solution in order to control solution flow. The morphological instability was improved and growth rate was significantly increased using the IG compared with conventional growth without the IG. Numerical fluid flow analysis with coupled heat and mass transportation was performed as well to understand convection and growth behavior. The origins of these improvements in the growth performance are discussed based on the numerical results. By controlling solution flow, we could successfully grow a three-inch-diameter 4H-SiC with 4-mm thickness.

Original language	English
Pages (from-to)	68-73
Number of pages	6
Journal	Journal of Crystal Growth
Volume	395
DOIs	https://doi.org/10.1016/j.jcrysgro.2014.03.006
Publication status	Published - 2014 Jun 1
Externally published	Yes

Keywords

A1. Computer simulation
A1. Fluid flows
A1. Morphological stability
A2. Growth from high temperature solutions
A2. Top-seeded solution growth
B2. Semiconducting silicon compounds

ASJC Scopus subject areas

Condensed Matter Physics
Materials Chemistry
Inorganic Chemistry

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10.1016/j.jcrysgro.2014.03.006

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title = "Top-seeded solution growth of three-inch-diameter 4H-SiC using convection control technique",

abstract = "The top-seeded solution growth of 4H-SiC at three inches in diameter has been investigated using Si-Ti alloy as a solvent. A perforated graphite disk called {"}immersion guide{"} (IG) was positioned in the solution in order to control solution flow. The morphological instability was improved and growth rate was significantly increased using the IG compared with conventional growth without the IG. Numerical fluid flow analysis with coupled heat and mass transportation was performed as well to understand convection and growth behavior. The origins of these improvements in the growth performance are discussed based on the numerical results. By controlling solution flow, we could successfully grow a three-inch-diameter 4H-SiC with 4-mm thickness.",

keywords = "A1. Computer simulation, A1. Fluid flows, A1. Morphological stability, A2. Growth from high temperature solutions, A2. Top-seeded solution growth, B2. Semiconducting silicon compounds",

author = "Kazuhiko Kusunoki and Nobuhiro Okada and Kazuhito Kamei and Koji Moriguchi and Hironori Daikoku and Motohisa Kado and Hidemitsu Sakamoto and Takeshi Bessho and Toru Ujihara",

year = "2014",

month = jun,

day = "1",

doi = "10.1016/j.jcrysgro.2014.03.006",

language = "English",

volume = "395",

pages = "68--73",

journal = "Journal of Crystal Growth",

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TY - JOUR

T1 - Top-seeded solution growth of three-inch-diameter 4H-SiC using convection control technique

AU - Kusunoki, Kazuhiko

AU - Okada, Nobuhiro

AU - Kamei, Kazuhito

AU - Moriguchi, Koji

AU - Daikoku, Hironori

AU - Kado, Motohisa

AU - Sakamoto, Hidemitsu

AU - Bessho, Takeshi

AU - Ujihara, Toru

PY - 2014/6/1

Y1 - 2014/6/1

N2 - The top-seeded solution growth of 4H-SiC at three inches in diameter has been investigated using Si-Ti alloy as a solvent. A perforated graphite disk called "immersion guide" (IG) was positioned in the solution in order to control solution flow. The morphological instability was improved and growth rate was significantly increased using the IG compared with conventional growth without the IG. Numerical fluid flow analysis with coupled heat and mass transportation was performed as well to understand convection and growth behavior. The origins of these improvements in the growth performance are discussed based on the numerical results. By controlling solution flow, we could successfully grow a three-inch-diameter 4H-SiC with 4-mm thickness.

AB - The top-seeded solution growth of 4H-SiC at three inches in diameter has been investigated using Si-Ti alloy as a solvent. A perforated graphite disk called "immersion guide" (IG) was positioned in the solution in order to control solution flow. The morphological instability was improved and growth rate was significantly increased using the IG compared with conventional growth without the IG. Numerical fluid flow analysis with coupled heat and mass transportation was performed as well to understand convection and growth behavior. The origins of these improvements in the growth performance are discussed based on the numerical results. By controlling solution flow, we could successfully grow a three-inch-diameter 4H-SiC with 4-mm thickness.

KW - A1. Computer simulation

KW - A1. Fluid flows

KW - A1. Morphological stability

KW - A2. Growth from high temperature solutions

KW - A2. Top-seeded solution growth

KW - B2. Semiconducting silicon compounds

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DO - 10.1016/j.jcrysgro.2014.03.006

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SN - 0022-0248

VL - 395

SP - 68

EP - 73

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -

Top-seeded solution growth of three-inch-diameter 4H-SiC using convection control technique

Abstract

Keywords

ASJC Scopus subject areas

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