Transconductance enhancement by utilizing pattern dependent oxidation in silicon nanowire field-effect transistors

A. Seike; T. Tange; I. Sano; Y. Sugiura; I. Tsuchida; H. Ohta; T. Watanabe; D. Kosemura; A. Ogura; I. Ohdomari

doi:10.1149/1.2911517

Transconductance enhancement by utilizing pattern dependent oxidation in silicon nanowire field-effect transistors

A. Seike^*, T. Tange, I. Sano, Y. Sugiura, I. Tsuchida, H. Ohta, T. Watanabe, D. Kosemura, A. Ogura, I. Ohdomari

^*Corresponding author for this work

School of Fundamental Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

Transconductance (gm) enhancement in n-type and p-type nanowire field-effect-transistors (nwFETs) is demonstrated by introducing controlled tensile strain into channel regions by pattern dependant oxidation (PADOX). Values of gm are enhanced relative to control devices by a factor of 1.5 in p-nwFETs and 3.0 in n-nwFETs. Strain distributions calculated by a three-dimensional molecular dynamics simulation reveal predominantly horizontal tensile stress in the nwFET channels. The Raman lines in the strain controlled devices display an increase in the full width half maximum, and a shift to lower wavenumber confirming that gm enhancement is due to tensile stress introduced by the PADOX approach

Original language	English
Title of host publication	ECS Transactions - Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4
Subtitle of host publication	New Materials, Processes, and Equipment
Pages	351-358
Number of pages	8
Edition	1
DOIs	https://doi.org/10.1149/1.2911517
Publication status	Published - 2008
Event	Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS: New Materials, Processes, and Equipment, 4 - Phoenix, AZ, United States Duration: 2008 May 18 → 2008 May 22

Publication series

Name	ECS Transactions
Number	1
Volume	13
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS: New Materials, Processes, and Equipment, 4
Country/Territory	United States
City	Phoenix, AZ
Period	08/5/18 → 08/5/22

ASJC Scopus subject areas

Engineering(all)

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10.1149/1.2911517

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Seike, A., Tange, T., Sano, I., Sugiura, Y., Tsuchida, I., Ohta, H., Watanabe, T., Kosemura, D., Ogura, A., & Ohdomari, I. (2008). Transconductance enhancement by utilizing pattern dependent oxidation in silicon nanowire field-effect transistors. In ECS Transactions - Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4: New Materials, Processes, and Equipment (1 ed., pp. 351-358). (ECS Transactions; Vol. 13, No. 1). https://doi.org/10.1149/1.2911517

Transconductance enhancement by utilizing pattern dependent oxidation in silicon nanowire field-effect transistors. / Seike, A.; Tange, T.; Sano, I. et al.
ECS Transactions - Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4: New Materials, Processes, and Equipment. 1. ed. 2008. p. 351-358 (ECS Transactions; Vol. 13, No. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Seike, A, Tange, T, Sano, I, Sugiura, Y, Tsuchida, I, Ohta, H, Watanabe, T, Kosemura, D, Ogura, A & Ohdomari, I 2008, Transconductance enhancement by utilizing pattern dependent oxidation in silicon nanowire field-effect transistors. in ECS Transactions - Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4: New Materials, Processes, and Equipment. 1 edn, ECS Transactions, no. 1, vol. 13, pp. 351-358, Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS: New Materials, Processes, and Equipment, 4, Phoenix, AZ, United States, 08/5/18. https://doi.org/10.1149/1.2911517

Seike A, Tange T, Sano I, Sugiura Y, Tsuchida I, Ohta H et al. Transconductance enhancement by utilizing pattern dependent oxidation in silicon nanowire field-effect transistors. In ECS Transactions - Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4: New Materials, Processes, and Equipment. 1 ed. 2008. p. 351-358. (ECS Transactions; 1). doi: 10.1149/1.2911517

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abstract = "Transconductance (gm) enhancement in n-type and p-type nanowire field-effect-transistors (nwFETs) is demonstrated by introducing controlled tensile strain into channel regions by pattern dependant oxidation (PADOX). Values of gm are enhanced relative to control devices by a factor of 1.5 in p-nwFETs and 3.0 in n-nwFETs. Strain distributions calculated by a three-dimensional molecular dynamics simulation reveal predominantly horizontal tensile stress in the nwFET channels. The Raman lines in the strain controlled devices display an increase in the full width half maximum, and a shift to lower wavenumber confirming that gm enhancement is due to tensile stress introduced by the PADOX approach",

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AU - Seike, A.

AU - Tange, T.

AU - Sano, I.

AU - Sugiura, Y.

AU - Tsuchida, I.

AU - Ohta, H.

AU - Watanabe, T.

AU - Kosemura, D.

AU - Ogura, A.

AU - Ohdomari, I.

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AB - Transconductance (gm) enhancement in n-type and p-type nanowire field-effect-transistors (nwFETs) is demonstrated by introducing controlled tensile strain into channel regions by pattern dependant oxidation (PADOX). Values of gm are enhanced relative to control devices by a factor of 1.5 in p-nwFETs and 3.0 in n-nwFETs. Strain distributions calculated by a three-dimensional molecular dynamics simulation reveal predominantly horizontal tensile stress in the nwFET channels. The Raman lines in the strain controlled devices display an increase in the full width half maximum, and a shift to lower wavenumber confirming that gm enhancement is due to tensile stress introduced by the PADOX approach

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Transconductance enhancement by utilizing pattern dependent oxidation in silicon nanowire field-effect transistors

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