Transition from excitonic tunneling to free carrier tunneling in GaAs/AlGaAs double quantum wells

Shulong Lu; Takafumi Ushiyama; Taisuke Fujita; Koji Kusunoki; Atsushi Tackeuchi; Shunichi Muto

doi:10.1143/JJAP.46.3305

Transition from excitonic tunneling to free carrier tunneling in GaAs/AlGaAs double quantum wells

Shulong Lu^*, Takafumi Ushiyama, Taisuke Fujita, Koji Kusunoki, Atsushi Tackeuchi, Shunichi Muto

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Nonresonant carrier tunneling has been studied as a function of temperature in GaAs/AlGaAs double quantum wells (DQWs). Time-resolved pump and probe reflectance measurements allow the direct observation of tunneling at any temperature between 15 K and room temperature. We found that for two DQWs with different barrier thicknesses, the tunneling time abruptly decreases above a critical temperature while it remains almost constant below the critical temperature. This critical temperature is shown to correspond to the exciton binding energy. Rate equation analysis explains this behavior as the thermalization of excitons into free electrons that have a faster tunneling time than excitons.

Original language	English
Pages (from-to)	3305-3308
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	46
Issue number	6 A
DOIs	https://doi.org/10.1143/JJAP.46.3305
Publication status	Published - 2007 Jun 6

Keywords

Double quantum wells
Excitons
Pump-probe
Tunneling

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.46.3305

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@article{8e8d22895d2f4202b4f4568aa343a7ff,

title = "Transition from excitonic tunneling to free carrier tunneling in GaAs/AlGaAs double quantum wells",

abstract = "Nonresonant carrier tunneling has been studied as a function of temperature in GaAs/AlGaAs double quantum wells (DQWs). Time-resolved pump and probe reflectance measurements allow the direct observation of tunneling at any temperature between 15 K and room temperature. We found that for two DQWs with different barrier thicknesses, the tunneling time abruptly decreases above a critical temperature while it remains almost constant below the critical temperature. This critical temperature is shown to correspond to the exciton binding energy. Rate equation analysis explains this behavior as the thermalization of excitons into free electrons that have a faster tunneling time than excitons.",

keywords = "Double quantum wells, Excitons, Pump-probe, Tunneling",

author = "Shulong Lu and Takafumi Ushiyama and Taisuke Fujita and Koji Kusunoki and Atsushi Tackeuchi and Shunichi Muto",

year = "2007",

month = jun,

day = "6",

doi = "10.1143/JJAP.46.3305",

language = "English",

volume = "46",

pages = "3305--3308",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "6 A",

}

TY - JOUR

T1 - Transition from excitonic tunneling to free carrier tunneling in GaAs/AlGaAs double quantum wells

AU - Lu, Shulong

AU - Ushiyama, Takafumi

AU - Fujita, Taisuke

AU - Kusunoki, Koji

AU - Tackeuchi, Atsushi

AU - Muto, Shunichi

PY - 2007/6/6

Y1 - 2007/6/6

N2 - Nonresonant carrier tunneling has been studied as a function of temperature in GaAs/AlGaAs double quantum wells (DQWs). Time-resolved pump and probe reflectance measurements allow the direct observation of tunneling at any temperature between 15 K and room temperature. We found that for two DQWs with different barrier thicknesses, the tunneling time abruptly decreases above a critical temperature while it remains almost constant below the critical temperature. This critical temperature is shown to correspond to the exciton binding energy. Rate equation analysis explains this behavior as the thermalization of excitons into free electrons that have a faster tunneling time than excitons.

AB - Nonresonant carrier tunneling has been studied as a function of temperature in GaAs/AlGaAs double quantum wells (DQWs). Time-resolved pump and probe reflectance measurements allow the direct observation of tunneling at any temperature between 15 K and room temperature. We found that for two DQWs with different barrier thicknesses, the tunneling time abruptly decreases above a critical temperature while it remains almost constant below the critical temperature. This critical temperature is shown to correspond to the exciton binding energy. Rate equation analysis explains this behavior as the thermalization of excitons into free electrons that have a faster tunneling time than excitons.

KW - Double quantum wells

KW - Excitons

KW - Pump-probe

KW - Tunneling

UR - http://www.scopus.com/inward/record.url?scp=34547838256&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34547838256&partnerID=8YFLogxK

U2 - 10.1143/JJAP.46.3305

DO - 10.1143/JJAP.46.3305

M3 - Article

AN - SCOPUS:34547838256

SN - 0021-4922

VL - 46

SP - 3305

EP - 3308

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 6 A

ER -

Transition from excitonic tunneling to free carrier tunneling in GaAs/AlGaAs double quantum wells

Abstract

Keywords

ASJC Scopus subject areas

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