Transition of topological Hall effect for tetragonal Heusler Mn2PtSn thin film

Satoshi Sugimoto*, Yukiko Takahashi, Shinya Kasai

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


A large topological Hall effect was observed in Mn2PtSn epitaxial thin films. The non-hysteretic topological Hall resistivity can be attributed to the canted spins below the reorientation temperature, while the hysteretic topological resistivity in the vicinity of the zero field captures the trend of antiskyrmion formation. A decrease in thickness enhances the contribution of dipolar interactions, leading to an additional antiskyrmion-type signal above the reorientation temperature. The amplitudes of these topological signals are strongly modulated by the film thickness, providing pathways for developing antiskyrmion-hosting media via film engineering.

Original languageEnglish
Article number103003
JournalApplied Physics Express
Issue number10
Publication statusPublished - 2021 Oct
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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