Abstract
The transport characteristics of electrons in weak short-period of 50 nm two-dimensional potential arrays were reported. The electrons were formed on a back-gated undoped GaAs/AlGaAs heterostructure with a shallow channel. The back-gated undoped system helped to control the electron density over a wide range. Also the condition of unit cell being filled by one electron was achieved. A strong Coulomb interaction between the electrons confined in the potential arrays was reflected by the feature determined by the electron density.
Original language | English |
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Pages (from-to) | 427-429 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 79 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2001 Jul 16 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)