Triode-type basic display structure using Si-doped AlN field emitters

Yashitaka Taniyasu; Makoto Kasu; Toshiki Makimoto; Naoki Kobayashi

doi:10.1002/pssa.200303302

Triode-type basic display structure using Si-doped AlN field emitters

Yashitaka Taniyasu^*, Makoto Kasu, Toshiki Makimoto, Naoki Kobayashi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

We fabricated a basic triode-type field emission display (FED) structure by using heavily Si-doped AlN and demonstrated its action. The FED consisted of the heavily Si-doped AlN field emitter, mesh grid, and phosphor-coated anode screen. We used the grid voltage to control the emission current. This device exhibited an emission current of 2 μA for an electric field of 23 V/μm, and luminescence from the phosphor excited by the field-emitted electrons was observed. The brightness of the luminescence increased as the grid voltage was increased, and it was uniform over the entire field-emission area.

Original language	English
Pages (from-to)	199-201
Number of pages	3
Journal	Physica Status Solidi (A) Applied Research
Volume	200
Issue number	1
DOIs	https://doi.org/10.1002/pssa.200303302
Publication status	Published - 2003 Nov
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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abstract = "We fabricated a basic triode-type field emission display (FED) structure by using heavily Si-doped AlN and demonstrated its action. The FED consisted of the heavily Si-doped AlN field emitter, mesh grid, and phosphor-coated anode screen. We used the grid voltage to control the emission current. This device exhibited an emission current of 2 μA for an electric field of 23 V/μm, and luminescence from the phosphor excited by the field-emitted electrons was observed. The brightness of the luminescence increased as the grid voltage was increased, and it was uniform over the entire field-emission area.",

author = "Yashitaka Taniyasu and Makoto Kasu and Toshiki Makimoto and Naoki Kobayashi",

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AU - Kasu, Makoto

AU - Makimoto, Toshiki

AU - Kobayashi, Naoki

PY - 2003/11

Y1 - 2003/11

N2 - We fabricated a basic triode-type field emission display (FED) structure by using heavily Si-doped AlN and demonstrated its action. The FED consisted of the heavily Si-doped AlN field emitter, mesh grid, and phosphor-coated anode screen. We used the grid voltage to control the emission current. This device exhibited an emission current of 2 μA for an electric field of 23 V/μm, and luminescence from the phosphor excited by the field-emitted electrons was observed. The brightness of the luminescence increased as the grid voltage was increased, and it was uniform over the entire field-emission area.

AB - We fabricated a basic triode-type field emission display (FED) structure by using heavily Si-doped AlN and demonstrated its action. The FED consisted of the heavily Si-doped AlN field emitter, mesh grid, and phosphor-coated anode screen. We used the grid voltage to control the emission current. This device exhibited an emission current of 2 μA for an electric field of 23 V/μm, and luminescence from the phosphor excited by the field-emitted electrons was observed. The brightness of the luminescence increased as the grid voltage was increased, and it was uniform over the entire field-emission area.

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Triode-type basic display structure using Si-doped AlN field emitters

Abstract

ASJC Scopus subject areas

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