Triple nitrogen-vacancy centre fabrication by C5N4H n ion implantation

Moriyoshi Haruyama, Shinobu Onoda*, Taisei Higuchi, Wataru Kada, Atsuya Chiba, Yoshimi Hirano, Tokuyuki Teraji, Ryuji Igarashi, Sora Kawai, Hiroshi Kawarada, Yu Ishii, Ryosuke Fukuda, Takashi Tanii, Junichi Isoya, Takeshi Ohshima, Osamu Hanaizumi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

26 Citations (Scopus)


Quantum information processing requires quantum registers based on coherently interacting quantum bits. The dipolar couplings between nitrogen vacancy (NV) centres with nanometre separation makes them a potential platform for room-temperature quantum registers. The fabrication of quantum registers that consist of NV centre arrays has not advanced beyond NV pairs for several years. Further scaling up of coupled NV centres by using nitrogen implantation through nanoholes has been hampered because the shortening of the separation distance is limited by the nanohole size and ion straggling. Here, we demonstrate the implantation of C5N4Hn from an adenine ion source to achieve further scaling. Because the C5N4Hn ion may be regarded as an ideal point source, the separation distance is solely determined by straggling. We successfully demonstrate the fabrication of strongly coupled triple NV centres. Our method may be extended to fabricate small quantum registers that can perform quantum information processing at room temperature.

Original languageEnglish
Article number2664
JournalNature communications
Issue number1
Publication statusPublished - 2019 Dec 1

ASJC Scopus subject areas

  • Chemistry(all)
  • Biochemistry, Genetics and Molecular Biology(all)
  • General
  • Physics and Astronomy(all)


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