Twin-mirror membrane distributed-reflector lasers using 20-μm-long active region on Si substrates

Erina Kanno; Koji Takeda; Takuro Fujii; Koichi Hasebe; Hidetaka Nishi; Tsuyoshi Yamamoto; Takaaki Kakitsuka; Shinji Matsuo

doi:10.1364/OE.26.001268

Twin-mirror membrane distributed-reflector lasers using 20-μm-long active region on Si substrates

Erina Kanno^*, Koji Takeda, Takuro Fujii, Koichi Hasebe, Hidetaka Nishi, Tsuyoshi Yamamoto, Takaaki Kakitsuka, Shinji Matsuo

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

We demonstrate 20-μm-long twin-mirror membrane distributed-reflector (DR) lasers for chip-to-chip optical interconnects. The lasers employ distributed Bragg reflectors (DBRs) at both ends of a 20-μm-long λ/4-phase shifted distributed feedback (DFB) section. We achieve single-mode lasing in a λ/4-phase shifted DFB mode at room temperature with a threshold current of 0.39 mA. The lasing wavelength remains stable while the injected current is varied, and it is determined by the λ/4 phase-shifted DFB. The modulation current efficiency is 11.4 GHz/mA^1/2, which is measured by using relative intensity noise spectra. We also demonstrate the direct modulation of the DR lasers at a bit rate of 25.8 Gbit/s with an energy cost of 163 fJ/bit.

Original language	English
Pages (from-to)	1268-1277
Number of pages	10
Journal	Optics Express
Volume	26
Issue number	2
DOIs	https://doi.org/10.1364/OE.26.001268
Publication status	Published - 2018 Jan 22
Externally published	Yes

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

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title = "Twin-mirror membrane distributed-reflector lasers using 20-μm-long active region on Si substrates",

abstract = "We demonstrate 20-μm-long twin-mirror membrane distributed-reflector (DR) lasers for chip-to-chip optical interconnects. The lasers employ distributed Bragg reflectors (DBRs) at both ends of a 20-μm-long λ/4-phase shifted distributed feedback (DFB) section. We achieve single-mode lasing in a λ/4-phase shifted DFB mode at room temperature with a threshold current of 0.39 mA. The lasing wavelength remains stable while the injected current is varied, and it is determined by the λ/4 phase-shifted DFB. The modulation current efficiency is 11.4 GHz/mA1/2, which is measured by using relative intensity noise spectra. We also demonstrate the direct modulation of the DR lasers at a bit rate of 25.8 Gbit/s with an energy cost of 163 fJ/bit.",

author = "Erina Kanno and Koji Takeda and Takuro Fujii and Koichi Hasebe and Hidetaka Nishi and Tsuyoshi Yamamoto and Takaaki Kakitsuka and Shinji Matsuo",

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T1 - Twin-mirror membrane distributed-reflector lasers using 20-μm-long active region on Si substrates

AU - Kanno, Erina

AU - Takeda, Koji

AU - Fujii, Takuro

AU - Hasebe, Koichi

AU - Nishi, Hidetaka

AU - Yamamoto, Tsuyoshi

AU - Kakitsuka, Takaaki

AU - Matsuo, Shinji

PY - 2018/1/22

Y1 - 2018/1/22

N2 - We demonstrate 20-μm-long twin-mirror membrane distributed-reflector (DR) lasers for chip-to-chip optical interconnects. The lasers employ distributed Bragg reflectors (DBRs) at both ends of a 20-μm-long λ/4-phase shifted distributed feedback (DFB) section. We achieve single-mode lasing in a λ/4-phase shifted DFB mode at room temperature with a threshold current of 0.39 mA. The lasing wavelength remains stable while the injected current is varied, and it is determined by the λ/4 phase-shifted DFB. The modulation current efficiency is 11.4 GHz/mA1/2, which is measured by using relative intensity noise spectra. We also demonstrate the direct modulation of the DR lasers at a bit rate of 25.8 Gbit/s with an energy cost of 163 fJ/bit.

AB - We demonstrate 20-μm-long twin-mirror membrane distributed-reflector (DR) lasers for chip-to-chip optical interconnects. The lasers employ distributed Bragg reflectors (DBRs) at both ends of a 20-μm-long λ/4-phase shifted distributed feedback (DFB) section. We achieve single-mode lasing in a λ/4-phase shifted DFB mode at room temperature with a threshold current of 0.39 mA. The lasing wavelength remains stable while the injected current is varied, and it is determined by the λ/4 phase-shifted DFB. The modulation current efficiency is 11.4 GHz/mA1/2, which is measured by using relative intensity noise spectra. We also demonstrate the direct modulation of the DR lasers at a bit rate of 25.8 Gbit/s with an energy cost of 163 fJ/bit.

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Twin-mirror membrane distributed-reflector lasers using 20-μm-long active region on Si substrates

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