Two-Wavelength Tunable Laser Diode using a Quantum Dot SOA and a Silicon Photonic External Cavity

Tomohiro Kita; Atsushi Matsumoto; Naokatsu Yamamoto; Manuel Mendez-Astudillo; Hirohito Yamada

doi:10.1109/ISLC.2018.8516147

Two-Wavelength Tunable Laser Diode using a Quantum Dot SOA and a Silicon Photonic External Cavity

Tomohiro Kita, Atsushi Matsumoto, Naokatsu Yamamoto, Manuel Mendez-Astudillo, Hirohito Yamada

School of Advanced Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

We propose a tunable two-wavelength heterogeneous quantum dot laser diode. The tunable two-wavelength laser consists of a quantum dot semiconductor optical amplifier and an external cavity fabricated from silicon photonics technology as the two-wavelength tunable filter. We successfully demonstrated two-wavelength lasing oscillation by tuning the difference frequency from approximately 34 GHz to 400 GHz.

Original language	English
Title of host publication	26th International Semiconductor Laser Conference, ISLC 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	23-24
Number of pages	2
ISBN (Electronic)	9781538664865
DOIs	https://doi.org/10.1109/ISLC.2018.8516147
Publication status	Published - 2018 Oct 30
Event	26th International Semiconductor Laser Conference, ISLC 2018 - Santa Fe, United States Duration: 2018 Sept 16 → 2018 Sept 19

Publication series

Name	Conference Digest - IEEE International Semiconductor Laser Conference
Volume	2018-September
ISSN (Print)	0899-9406

Other

Other	26th International Semiconductor Laser Conference, ISLC 2018
Country/Territory	United States
City	Santa Fe
Period	18/9/16 → 18/9/19

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Access to Document

10.1109/ISLC.2018.8516147

Cite this

Kita, T., Matsumoto, A., Yamamoto, N., Mendez-Astudillo, M., & Yamada, H. (2018). Two-Wavelength Tunable Laser Diode using a Quantum Dot SOA and a Silicon Photonic External Cavity. In 26th International Semiconductor Laser Conference, ISLC 2018 (pp. 23-24). Article 8516147 (Conference Digest - IEEE International Semiconductor Laser Conference; Vol. 2018-September). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISLC.2018.8516147

Two-Wavelength Tunable Laser Diode using a Quantum Dot SOA and a Silicon Photonic External Cavity. / Kita, Tomohiro; Matsumoto, Atsushi; Yamamoto, Naokatsu et al.
26th International Semiconductor Laser Conference, ISLC 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 23-24 8516147 (Conference Digest - IEEE International Semiconductor Laser Conference; Vol. 2018-September).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kita, T, Matsumoto, A, Yamamoto, N, Mendez-Astudillo, M & Yamada, H 2018, Two-Wavelength Tunable Laser Diode using a Quantum Dot SOA and a Silicon Photonic External Cavity. in 26th International Semiconductor Laser Conference, ISLC 2018., 8516147, Conference Digest - IEEE International Semiconductor Laser Conference, vol. 2018-September, Institute of Electrical and Electronics Engineers Inc., pp. 23-24, 26th International Semiconductor Laser Conference, ISLC 2018, Santa Fe, United States, 18/9/16. https://doi.org/10.1109/ISLC.2018.8516147

Kita T, Matsumoto A, Yamamoto N, Mendez-Astudillo M, Yamada H. Two-Wavelength Tunable Laser Diode using a Quantum Dot SOA and a Silicon Photonic External Cavity. In 26th International Semiconductor Laser Conference, ISLC 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. 23-24. 8516147. (Conference Digest - IEEE International Semiconductor Laser Conference). doi: 10.1109/ISLC.2018.8516147

Kita, Tomohiro ; Matsumoto, Atsushi ; Yamamoto, Naokatsu et al. / Two-Wavelength Tunable Laser Diode using a Quantum Dot SOA and a Silicon Photonic External Cavity. 26th International Semiconductor Laser Conference, ISLC 2018. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 23-24 (Conference Digest - IEEE International Semiconductor Laser Conference).

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title = "Two-Wavelength Tunable Laser Diode using a Quantum Dot SOA and a Silicon Photonic External Cavity",

abstract = "We propose a tunable two-wavelength heterogeneous quantum dot laser diode. The tunable two-wavelength laser consists of a quantum dot semiconductor optical amplifier and an external cavity fabricated from silicon photonics technology as the two-wavelength tunable filter. We successfully demonstrated two-wavelength lasing oscillation by tuning the difference frequency from approximately 34 GHz to 400 GHz.",

author = "Tomohiro Kita and Atsushi Matsumoto and Naokatsu Yamamoto and Manuel Mendez-Astudillo and Hirohito Yamada",

note = "Funding Information: This research was partly supported by the R&D project on carrier-conversion technology with high environmental tolerance, National Institute of Information and Communication Technology, Japan. References [1] T. Umezawa et al., J. Lightwave Technol., Vol. 34, No. 13, pp. 3138-3147 (2016). [2] A. Kanno et al., IEEE Photonics J., Vol. 4, No. 6, 2196-2204 (2012). [3] M. J. Fice et al., Opt. Express, Vol. 20, No. 2, pp. 1796-1774 (2012). [4] T. Kita et al., J. Lightwave Technol., Vol. 36, No. 2, pp. 219-224 (2018). Publisher Copyright: {\textcopyright} 2018 IEEE.; 26th International Semiconductor Laser Conference, ISLC 2018 ; Conference date: 16-09-2018 Through 19-09-2018",

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doi = "10.1109/ISLC.2018.8516147",

language = "English",

series = "Conference Digest - IEEE International Semiconductor Laser Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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AU - Yamada, Hirohito

N1 - Funding Information: This research was partly supported by the R&D project on carrier-conversion technology with high environmental tolerance, National Institute of Information and Communication Technology, Japan. References [1] T. Umezawa et al., J. Lightwave Technol., Vol. 34, No. 13, pp. 3138-3147 (2016). [2] A. Kanno et al., IEEE Photonics J., Vol. 4, No. 6, 2196-2204 (2012). [3] M. J. Fice et al., Opt. Express, Vol. 20, No. 2, pp. 1796-1774 (2012). [4] T. Kita et al., J. Lightwave Technol., Vol. 36, No. 2, pp. 219-224 (2018). Publisher Copyright: © 2018 IEEE.

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N2 - We propose a tunable two-wavelength heterogeneous quantum dot laser diode. The tunable two-wavelength laser consists of a quantum dot semiconductor optical amplifier and an external cavity fabricated from silicon photonics technology as the two-wavelength tunable filter. We successfully demonstrated two-wavelength lasing oscillation by tuning the difference frequency from approximately 34 GHz to 400 GHz.

AB - We propose a tunable two-wavelength heterogeneous quantum dot laser diode. The tunable two-wavelength laser consists of a quantum dot semiconductor optical amplifier and an external cavity fabricated from silicon photonics technology as the two-wavelength tunable filter. We successfully demonstrated two-wavelength lasing oscillation by tuning the difference frequency from approximately 34 GHz to 400 GHz.

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Two-Wavelength Tunable Laser Diode using a Quantum Dot SOA and a Silicon Photonic External Cavity

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