Ultra-Low Voltage and Ultra-Low Power Consumption Nonvolatile Operation of a Three-Terminal Atomic Switch

Qi Wang; Yaomi Itoh; Tohru Tsuruoka; Masakazu Aono; Tsuyoshi Hasegawa

doi:10.1002/adma.201502678

Ultra-Low Voltage and Ultra-Low Power Consumption Nonvolatile Operation of a Three-Terminal Atomic Switch

Qi Wang^*, Yaomi Itoh, Tohru Tsuruoka, Masakazu Aono, Tsuyoshi Hasegawa

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

Nonvolatile three-terminal operation, with a very small range of bias sweeping (-80 to 250 mV), a high on/off ratio of up to six orders of magnitude, and a very small gate leakage current (<1 pA), is demonstrated using an Ag (gate)/Ta₂O₅ (ionic transfer layer)/Pt (source), Pt (drain) three-terminal atomic switch structure.

Original language	English
Pages (from-to)	6029-6033
Number of pages	5
Journal	Advanced Materials
Volume	27
Issue number	39
DOIs	https://doi.org/10.1002/adma.201502678
Publication status	Published - 2015 Oct 1

Keywords

ReRAM
atomic switches
low voltage
redox
three terminal

ASJC Scopus subject areas

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

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10.1002/adma.201502678

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abstract = "Nonvolatile three-terminal operation, with a very small range of bias sweeping (-80 to 250 mV), a high on/off ratio of up to six orders of magnitude, and a very small gate leakage current (<1 pA), is demonstrated using an Ag (gate)/Ta2O5 (ionic transfer layer)/Pt (source), Pt (drain) three-terminal atomic switch structure.",

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author = "Qi Wang and Yaomi Itoh and Tohru Tsuruoka and Masakazu Aono and Tsuyoshi Hasegawa",

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AU - Wang, Qi

AU - Itoh, Yaomi

AU - Tsuruoka, Tohru

AU - Aono, Masakazu

AU - Hasegawa, Tsuyoshi

PY - 2015/10/1

Y1 - 2015/10/1

N2 - Nonvolatile three-terminal operation, with a very small range of bias sweeping (-80 to 250 mV), a high on/off ratio of up to six orders of magnitude, and a very small gate leakage current (<1 pA), is demonstrated using an Ag (gate)/Ta2O5 (ionic transfer layer)/Pt (source), Pt (drain) three-terminal atomic switch structure.

AB - Nonvolatile three-terminal operation, with a very small range of bias sweeping (-80 to 250 mV), a high on/off ratio of up to six orders of magnitude, and a very small gate leakage current (<1 pA), is demonstrated using an Ag (gate)/Ta2O5 (ionic transfer layer)/Pt (source), Pt (drain) three-terminal atomic switch structure.

KW - ReRAM

KW - atomic switches

KW - low voltage

KW - redox

KW - three terminal

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Ultra-Low Voltage and Ultra-Low Power Consumption Nonvolatile Operation of a Three-Terminal Atomic Switch

Abstract

Keywords

ASJC Scopus subject areas

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