A multimode waveguide p-i-n photodiode (WGPD) and a distributed baseband amplifier consisting of high-electron mobility transistors (HEMT's) were monolithically integrated on InP substrate using a stacked layer structure for both components. The multimode WGPD has a 3-dB bandwidth of 49 GHz. The distributed baseband amplifier has a 3-dB bandwidth of 47 GHz, though its 0.5-μm gate-length HEMT's have modest cutoff frequencies fT/fmax of 47/100 GHz. The receiver optoelectronic integrated circuit has a bandwidth of 46.5 GHz. It was packaged into a fiber-pig-tailed module, and the WGPD in the module has a high responsivity of 0.62 A/W for 1.55-μm wavelength. The module achieves a sensitivity of -22.7 dBm at 40 Gb/s and exhibits a clear eye-opening at 50 Gb/s.
|Number of pages
|IEEE Journal on Selected Topics in Quantum Electronics
|Published - 2000 Jan
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering