TY - GEN
T1 - Ultrafast Spin Relaxation in InGaAs/InP Quantum Wells for Femtoseconds Switch Applications
AU - Tackeuchi, Atsushi
AU - Wada, Osamu
AU - Nishikawa, Yuji
N1 - Funding Information:
We thank Drs. T. Nishimura, H. Yoshida and Y. Matsui for their useful discussions. We also acknowledge Drs. T. Sakurai, Y. Katayama, and F. Saitoh for encouragement. This work was supported by the New Energy and Industrial Technology Development Organization in the frame of the Femtosecond Technology Project.
Publisher Copyright:
© 1997 Optical Society of America.
PY - 1997
Y1 - 1997
N2 - The electron spin-relaxation time of InGaAs/InP multiple-quantum wells has been measured to be 5.2 ps for 1.54-μm excitonic absorption. This is an order of magnitude faster than in GaAs quantum wells indicating the possibility of femtoseconds all-optical gate operation in the long-wavelength region.
AB - The electron spin-relaxation time of InGaAs/InP multiple-quantum wells has been measured to be 5.2 ps for 1.54-μm excitonic absorption. This is an order of magnitude faster than in GaAs quantum wells indicating the possibility of femtoseconds all-optical gate operation in the long-wavelength region.
KW - All-optical devices
KW - Semiconductor nonlinear optics including MQW
KW - Ultrafast devices
KW - Ultrafast processes in condensed matter
UR - http://www.scopus.com/inward/record.url?scp=85135511300&partnerID=8YFLogxK
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M3 - Conference contribution
AN - SCOPUS:85135511300
T3 - Optics InfoBase Conference Papers
SP - 268
EP - 271
BT - Ultrafast Electronics and Optoelectronics, UEO 1997
PB - Optica Publishing Group (formerly OSA)
T2 - Ultrafast Electronics and Optoelectronics, UEO 1997
Y2 - 17 March 1997 through 17 March 1997
ER -