TY - GEN
T1 - Ultrafast Spin Relaxation in InGaAs/InP Quantum Wells for Femtoseconds Switch Applications
AU - Tackeuchi, Atsushi
AU - Wada, Osamu
AU - Nishikawa, Yuji
N1 - Publisher Copyright:
© 1997 Optical Society of America.
PY - 1997
Y1 - 1997
N2 - The electron spin-relaxation time of InGaAs/InP multiple-quantum wells has been measured to be 5.2 ps for 1.54-μm excitonic absorption. This is an order of magnitude faster than in GaAs quantum wells indicating the possibility of femtoseconds all-optical gate operation in the long-wavelength region.
AB - The electron spin-relaxation time of InGaAs/InP multiple-quantum wells has been measured to be 5.2 ps for 1.54-μm excitonic absorption. This is an order of magnitude faster than in GaAs quantum wells indicating the possibility of femtoseconds all-optical gate operation in the long-wavelength region.
KW - All-optical devices
KW - Semiconductor nonlinear optics including MQW
KW - Ultrafast devices
KW - Ultrafast processes in condensed matter
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M3 - Conference contribution
AN - SCOPUS:85135511300
T3 - Optics InfoBase Conference Papers
SP - 268
EP - 271
BT - Ultrafast Electronics and Optoelectronics, UEO 1997
PB - Optica Publishing Group (formerly OSA)
T2 - Ultrafast Electronics and Optoelectronics, UEO 1997
Y2 - 17 March 1997 through 17 March 1997
ER -