Ultrafast Spin Relaxation in InGaAs/InP Quantum Wells for Femtoseconds Switch Applications

Atsushi Tackeuchi; Osamu Wada; Yuji Nishikawa

Ultrafast Spin Relaxation in InGaAs/InP Quantum Wells for Femtoseconds Switch Applications

Atsushi Tackeuchi, Osamu Wada, Yuji Nishikawa

School of Advanced Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The electron spin-relaxation time of InGaAs/InP multiple-quantum wells has been measured to be 5.2 ps for 1.54-μm excitonic absorption. This is an order of magnitude faster than in GaAs quantum wells indicating the possibility of femtoseconds all-optical gate operation in the long-wavelength region.

Original language	English
Title of host publication	Ultrafast Electronics and Optoelectronics, UEO 1997
Publisher	Optica Publishing Group (formerly OSA)
Pages	268-271
Number of pages	4
ISBN (Electronic)	1557524866
Publication status	Published - 1997
Event	Ultrafast Electronics and Optoelectronics, UEO 1997 - Incline Village, United States Duration: 1997 Mar 17 → 1997 Mar 17

Publication series

Name	Optics InfoBase Conference Papers
ISSN (Electronic)	2162-2701

Conference

Conference	Ultrafast Electronics and Optoelectronics, UEO 1997
Country/Territory	United States
City	Incline Village
Period	97/3/17 → 97/3/17

Keywords

All-optical devices
Semiconductor nonlinear optics including MQW
Ultrafast devices
Ultrafast processes in condensed matter

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Mechanics of Materials

Cite this

Ultrafast Spin Relaxation in InGaAs/InP Quantum Wells for Femtoseconds Switch Applications. / Tackeuchi, Atsushi; Wada, Osamu; Nishikawa, Yuji.
Ultrafast Electronics and Optoelectronics, UEO 1997. Optica Publishing Group (formerly OSA), 1997. p. 268-271 (Optics InfoBase Conference Papers).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Tackeuchi, A, Wada, O & Nishikawa, Y 1997, Ultrafast Spin Relaxation in InGaAs/InP Quantum Wells for Femtoseconds Switch Applications. in Ultrafast Electronics and Optoelectronics, UEO 1997. Optics InfoBase Conference Papers, Optica Publishing Group (formerly OSA), pp. 268-271, Ultrafast Electronics and Optoelectronics, UEO 1997, Incline Village, United States, 97/3/17.

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title = "Ultrafast Spin Relaxation in InGaAs/InP Quantum Wells for Femtoseconds Switch Applications",

abstract = "The electron spin-relaxation time of InGaAs/InP multiple-quantum wells has been measured to be 5.2 ps for 1.54-μm excitonic absorption. This is an order of magnitude faster than in GaAs quantum wells indicating the possibility of femtoseconds all-optical gate operation in the long-wavelength region.",

keywords = "All-optical devices, Semiconductor nonlinear optics including MQW, Ultrafast devices, Ultrafast processes in condensed matter",

author = "Atsushi Tackeuchi and Osamu Wada and Yuji Nishikawa",

note = "Publisher Copyright: {\textcopyright} 1997 Optical Society of America.; Ultrafast Electronics and Optoelectronics, UEO 1997 ; Conference date: 17-03-1997 Through 17-03-1997",

year = "1997",

language = "English",

series = "Optics InfoBase Conference Papers",

publisher = "Optica Publishing Group (formerly OSA)",

pages = "268--271",

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AU - Tackeuchi, Atsushi

AU - Wada, Osamu

AU - Nishikawa, Yuji

PY - 1997

Y1 - 1997

N2 - The electron spin-relaxation time of InGaAs/InP multiple-quantum wells has been measured to be 5.2 ps for 1.54-μm excitonic absorption. This is an order of magnitude faster than in GaAs quantum wells indicating the possibility of femtoseconds all-optical gate operation in the long-wavelength region.

AB - The electron spin-relaxation time of InGaAs/InP multiple-quantum wells has been measured to be 5.2 ps for 1.54-μm excitonic absorption. This is an order of magnitude faster than in GaAs quantum wells indicating the possibility of femtoseconds all-optical gate operation in the long-wavelength region.

KW - All-optical devices

KW - Semiconductor nonlinear optics including MQW

KW - Ultrafast devices

KW - Ultrafast processes in condensed matter

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M3 - Conference contribution

AN - SCOPUS:85135511300

T3 - Optics InfoBase Conference Papers

SP - 268

EP - 271

BT - Ultrafast Electronics and Optoelectronics, UEO 1997

PB - Optica Publishing Group (formerly OSA)

T2 - Ultrafast Electronics and Optoelectronics, UEO 1997

Y2 - 17 March 1997 through 17 March 1997

ER -

Ultrafast Spin Relaxation in InGaAs/InP Quantum Wells for Femtoseconds Switch Applications

Abstract

Publication series

Conference

Keywords

ASJC Scopus subject areas

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