Ultrafast spin relaxation in quantum-confined structures for all-optical switching

Osamu Wada*, Atsushi Tackeuchi, Yuji Nishikawa, Tetsuya Nishimura

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

2 Citations (Scopus)


Electron-spin relaxation has been investigated in a variety of quantum confined structures including GaAs-based quantum wells and quantum wires as well as InP-based quantum wells, and it has been shown to exhibit ultrafast relaxation in the picosecond, and even in the femtosecond, range. This ultrafast relaxation has been used together with the exciton absorption nonlinearity as an novel principle of all-optical switching device which can avoid the speed limit due to the slow carrier lifetime in conventional switching devices. Experiments on GaAs-based quantum-well spin switches have shown 4-ps gate switch operation. Also, experimental analyses have shown the feasibility of these devices at a high contrast ratio (13 dB) and high repetition rate (40 GHz). The application of this device to a demultiplexer has been proposed.

Original languageEnglish
Pages (from-to)602-613
Number of pages12
JournalProceedings of SPIE - The International Society for Optical Engineering
Publication statusPublished - 1998
EventPhysics and Simulation of Optoelectronic Devices VI - San Jose, CA, United States
Duration: 1998 Jan 261998 Jan 26

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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