Ultralow-voltage operation of Silicon-on-Thin-BOX (SOTB) 2Mbit SRAM down to 0.37 v utilizing adaptive back bias

Y. Yamamoto, H. Makiyama, H. Shinohara, T. Iwamatsu, H. Oda, S. Kamohara, N. Sugii, Y. Yamaguchi, T. Mizutani, T. Hiramoto

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

16 Citations (Scopus)

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Engineering & Materials Science

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