Ultrashallow junction formation by self-limiting LTP and its application to sub-65-nm node MOSFETs

Akio Shima*, Hiroshi Ashihara, Atsushi Hiraiwa, Toshiyuki Mine, Yasushi Goto

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)


We have developed a novel laser thermal process that dramatically enhances laser exposure windows by controlling the heating process in a self-limiting way. Key technology is realized by introducing a new process combination of preamorphization implantation and a heat absorber with a phase switch layer, and by optimizing them. The Vth rolloffs of MOSFETs formed by this method were remarkably improved compared to those by rapid thermal annealing when offset-spacer and halo-implantation processes were not applied. Its effectiveness was also verified in 50-nm gate complementary metal-oxide semiconductor devices for the first time by confirming that the drain current increased with laser fluence beyond the conventional exposure limit.

Original languageEnglish
Pages (from-to)1165-1171
Number of pages7
JournalIEEE Transactions on Electron Devices
Issue number6
Publication statusPublished - 2005 Jun
Externally publishedYes


  • Amorphous materials
  • Complementary metal-oxide semiconductor (CMOS) integrated circuits
  • Laser annealing
  • Preamorphization implantation
  • Rapid thermal annealed (RTA)
  • Ultrashallow junction
  • YAG lasers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)


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