Ultrashallow TiC source/drain contacts in diamond MOSFETs formed by hydrogenation-last approach

Yoshikatsu Jingu*, Kazuyuki Hirama, Hiroshi Kawarada

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

40 Citations (Scopus)


Applying the hydrogen (H) radical exposure at the last step of MOSFET fabrication process, an oxygen (O)-terminated channel was converted to a H-terminated one to obtain subsurface hole accumulation for field-effect transistor operation. Low-resistive titanium carbide (TiC) source/drain and alumina gate oxide were resistant to the hydrogenation process. The shallow TiC side contacts (∼3 nm in depth) to the hole accumulation layer (channel) showed good ohmic contacts with a specific contact resistance of 2 × 10-7-7 × 10-7 Ω · cm2. For diamond MOSFETs with the TiC ohmic layer, the saturated maximum drain current and maximum transconductance reached 160 mA/mm and 45 mS/mm, respectively. An fT of 6.2 GHz and an fmax of 12.6 GHz were obtained. The hydrogenation-last approach is a nondestructive method for the fabrication of diamond MOSFET with high production yield.

Original languageEnglish
Article number4
Pages (from-to)966-972
Number of pages7
JournalIEEE Transactions on Electron Devices
Issue number5
Publication statusPublished - 2010 May


  • Contact
  • Diamond
  • Hydrogen
  • TiC

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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