Ultrathin silicon dioxide formation by ozone on ultraflat SI surface

A. Kurokawa*, T. Maeda, K. Sakamoto, H. Itoh, K. Nakamura, K. Koike, D. W. Moon, Y. H. Ha, S. Ichimura, A. Ando

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

6 Citations (Scopus)


We prepared an atomically flat silicon substrate which had a step-terrace structure and observed the topography of the ozone-oxidized surface to clarify whether homogeneous oxidation occurs with ozone. The oxide was formed with high-concentration ozone gas with a thickness of 2.5nm at a temperature of 350°C. The oxide surface still maintained the same step-terrace structure as observed before oxidation, which revealed that ozone oxidation occurs layer-by-layer and produces an atomically flat oxide. XPS and MEIS analyses show that the stoichiometry of ozone oxide grown at 350°C is the same as that of an oxide grown thermally at 750°C.

Original languageEnglish
Pages (from-to)21-26
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Publication statusPublished - 1999
Externally publishedYes
EventProceedings of the 1999 MRS Spring Meeting - Symposium on Ultrathin SiO2 and High-k Materials for ULSI Gate Dielectrics - San Francisco, CA, USA
Duration: 1999 Apr 51999 Apr 8

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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