Ultraviolet and blue holographic lithography of ZnSe epilayers and heterostructures with feature size to 100 nm and below

W. Walecki; W. R. Patterson; A. V. Nurmikko; H. Luo; N. Samarth; J. K. Furdyna; M. Kobayashi; S. Durbin; R. L. Gunshor

doi:10.1063/1.103810

Ultraviolet and blue holographic lithography of ZnSe epilayers and heterostructures with feature size to 100 nm and below

W. Walecki^*, W. R. Patterson, A. V. Nurmikko, H. Luo, N. Samarth, J. K. Furdyna, M. Kobayashi, S. Durbin, R. L. Gunshor

^*Corresponding author for this work

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29 Citations (Scopus)

Abstract

We have employed short-wavelength holographic laser lithography and reactive ion etching to define wire and dot-like patterns in ZnSe thin epitaxial films and heterostructures with spatial feature size to better than 100 nm. Photoluminescence measurements suggest that surface damage from etching may be much less severe than in III-V semiconductors.<hedend>.

Original language	English
Pages (from-to)	2641-2643
Number of pages	3
Journal	Applied Physics Letters
Volume	57
Issue number	25
DOIs	https://doi.org/10.1063/1.103810
Publication status	Published - 1990
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.103810

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title = "Ultraviolet and blue holographic lithography of ZnSe epilayers and heterostructures with feature size to 100 nm and below",

abstract = "We have employed short-wavelength holographic laser lithography and reactive ion etching to define wire and dot-like patterns in ZnSe thin epitaxial films and heterostructures with spatial feature size to better than 100 nm. Photoluminescence measurements suggest that surface damage from etching may be much less severe than in III-V semiconductors..",

author = "W. Walecki and Patterson, {W. R.} and Nurmikko, {A. V.} and H. Luo and N. Samarth and Furdyna, {J. K.} and M. Kobayashi and S. Durbin and Gunshor, {R. L.}",

year = "1990",

doi = "10.1063/1.103810",

language = "English",

volume = "57",

pages = "2641--2643",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "25",

}

TY - JOUR

T1 - Ultraviolet and blue holographic lithography of ZnSe epilayers and heterostructures with feature size to 100 nm and below

AU - Walecki, W.

AU - Patterson, W. R.

AU - Nurmikko, A. V.

AU - Luo, H.

AU - Samarth, N.

AU - Furdyna, J. K.

AU - Kobayashi, M.

AU - Durbin, S.

AU - Gunshor, R. L.

PY - 1990

Y1 - 1990

N2 - We have employed short-wavelength holographic laser lithography and reactive ion etching to define wire and dot-like patterns in ZnSe thin epitaxial films and heterostructures with spatial feature size to better than 100 nm. Photoluminescence measurements suggest that surface damage from etching may be much less severe than in III-V semiconductors..

AB - We have employed short-wavelength holographic laser lithography and reactive ion etching to define wire and dot-like patterns in ZnSe thin epitaxial films and heterostructures with spatial feature size to better than 100 nm. Photoluminescence measurements suggest that surface damage from etching may be much less severe than in III-V semiconductors..

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U2 - 10.1063/1.103810

DO - 10.1063/1.103810

M3 - Article

AN - SCOPUS:36549104888

SN - 0003-6951

VL - 57

SP - 2641

EP - 2643

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

ER -

Ultraviolet and blue holographic lithography of ZnSe epilayers and heterostructures with feature size to 100 nm and below

Abstract

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