Ultraviolet-emitting ZnO thick layer grown by thermal oxidation with gallium

Qing Yang; Xiao Hong Zhou; Takao Nukui; Yu Saeki; Sotaro Izumi; Atsushi Tackeuchi; Hirokazu Tatsuoka; Shu Hua Liang

doi:10.1007/s11431-014-5714-y

Ultraviolet-emitting ZnO thick layer grown by thermal oxidation with gallium

Qing Yang^*, Xiao Hong Zhou, Takao Nukui, Yu Saeki, Sotaro Izumi, Atsushi Tackeuchi, Hirokazu Tatsuoka, Shu Hua Liang

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

The ZnO layer with thickness of 1.6 μm in ZnO/ZnGa₂O₄ composite structure was grown by the thermal oxidation of ZnS substrate with gallium. The optical property of the ZnO thick layer was investigated by time-resolved photoluminescence. A single UV emission around 375 nm with short lifetime was observed at room temperature while the visible emission was absolutely quenched. The UV emission band was composed of the neutral donor bound exciton (D⁰X) and donor-acceptor pair (DAP) emission peaks with large full-width at half-maximums (FWHMs) at 3.367 and 3.318 eV, respectively, at 10 K. However, the intensity of the D⁰X emission was stronger than that of the DAP emission at measuring temperatures of 10–300 K.

Original language	English
Pages (from-to)	2500-2503
Number of pages	4
Journal	Science China Technological Sciences
Volume	57
Issue number	12
DOIs	https://doi.org/10.1007/s11431-014-5714-y
Publication status	Published - 2014 Dec 11

Keywords

ZnO layer
gallium
photoluminescence
thermal oxidation
ultraviolet

ASJC Scopus subject areas

Materials Science(all)
Engineering(all)

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10.1007/s11431-014-5714-y

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title = "Ultraviolet-emitting ZnO thick layer grown by thermal oxidation with gallium",

abstract = "The ZnO layer with thickness of 1.6 μm in ZnO/ZnGa2O4 composite structure was grown by the thermal oxidation of ZnS substrate with gallium. The optical property of the ZnO thick layer was investigated by time-resolved photoluminescence. A single UV emission around 375 nm with short lifetime was observed at room temperature while the visible emission was absolutely quenched. The UV emission band was composed of the neutral donor bound exciton (D0X) and donor-acceptor pair (DAP) emission peaks with large full-width at half-maximums (FWHMs) at 3.367 and 3.318 eV, respectively, at 10 K. However, the intensity of the D0X emission was stronger than that of the DAP emission at measuring temperatures of 10–300 K.",

keywords = "ZnO layer, gallium, photoluminescence, thermal oxidation, ultraviolet",

author = "Qing Yang and Zhou, {Xiao Hong} and Takao Nukui and Yu Saeki and Sotaro Izumi and Atsushi Tackeuchi and Hirokazu Tatsuoka and Liang, {Shu Hua}",

note = "Funding Information: This work was supported by the National Natural Science Foundation of China (Grant No. 51202191), Natural Science Basic Research Plan in Shaanxi Province of China (Grant No. 2012JQ6002), and Scientific Research Program Funded by Shaanxi Provincial Education Department of China (Grant No. 12JK0427). The authors would like to thank T. Aritake, M. Asakawa and M. Uemura of Waseda University for their assistance with data analysis. Publisher Copyright: {\textcopyright} 2014, Science China Press and Springer-Verlag Berlin Heidelberg.",

year = "2014",

month = dec,

day = "11",

doi = "10.1007/s11431-014-5714-y",

language = "English",

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journal = "Science China Technological Sciences",

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T1 - Ultraviolet-emitting ZnO thick layer grown by thermal oxidation with gallium

AU - Yang, Qing

AU - Zhou, Xiao Hong

AU - Nukui, Takao

AU - Saeki, Yu

AU - Izumi, Sotaro

AU - Tackeuchi, Atsushi

AU - Tatsuoka, Hirokazu

AU - Liang, Shu Hua

N1 - Funding Information: This work was supported by the National Natural Science Foundation of China (Grant No. 51202191), Natural Science Basic Research Plan in Shaanxi Province of China (Grant No. 2012JQ6002), and Scientific Research Program Funded by Shaanxi Provincial Education Department of China (Grant No. 12JK0427). The authors would like to thank T. Aritake, M. Asakawa and M. Uemura of Waseda University for their assistance with data analysis. Publisher Copyright: © 2014, Science China Press and Springer-Verlag Berlin Heidelberg.

PY - 2014/12/11

Y1 - 2014/12/11

N2 - The ZnO layer with thickness of 1.6 μm in ZnO/ZnGa2O4 composite structure was grown by the thermal oxidation of ZnS substrate with gallium. The optical property of the ZnO thick layer was investigated by time-resolved photoluminescence. A single UV emission around 375 nm with short lifetime was observed at room temperature while the visible emission was absolutely quenched. The UV emission band was composed of the neutral donor bound exciton (D0X) and donor-acceptor pair (DAP) emission peaks with large full-width at half-maximums (FWHMs) at 3.367 and 3.318 eV, respectively, at 10 K. However, the intensity of the D0X emission was stronger than that of the DAP emission at measuring temperatures of 10–300 K.

AB - The ZnO layer with thickness of 1.6 μm in ZnO/ZnGa2O4 composite structure was grown by the thermal oxidation of ZnS substrate with gallium. The optical property of the ZnO thick layer was investigated by time-resolved photoluminescence. A single UV emission around 375 nm with short lifetime was observed at room temperature while the visible emission was absolutely quenched. The UV emission band was composed of the neutral donor bound exciton (D0X) and donor-acceptor pair (DAP) emission peaks with large full-width at half-maximums (FWHMs) at 3.367 and 3.318 eV, respectively, at 10 K. However, the intensity of the D0X emission was stronger than that of the DAP emission at measuring temperatures of 10–300 K.

KW - ZnO layer

KW - gallium

KW - photoluminescence

KW - thermal oxidation

KW - ultraviolet

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ER -

Ultraviolet-emitting ZnO thick layer grown by thermal oxidation with gallium

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