Ultraviolet-photon-induced paramagnetic centers in GE and SN co-doped silica glass

Makoto Fujimaki; Shin ichiro Tokuhiro; Tetsuya Nakanishi; Ken ichi Nomura; Yoshimichi Ohki; Kazuo Imamura

Ultraviolet-photon-induced paramagnetic centers in GE and SN co-doped silica glass

Makoto Fujimaki^*, Shin ichiro Tokuhiro, Tetsuya Nakanishi, Ken ichi Nomura, Yoshimichi Ohki, Kazuo Imamura

^*Corresponding author for this work

Research output: Contribution to conference › Paper › peer-review

Abstract

Paramagnetic centers and absorption bands in the visible-to-uv region in Ge and Sn co-doped SiO₂ glass irradiated with UV photons from a KrF excimer laser were examined. The (Sn⁴⁺)^- and the Sn E' centers were induced by the irradiation of KrF excimer laser photons. It was observed that the absorption of the (Sn⁴⁺)^- is around 4.4 and 5.4 eV. Furthermore, it was found that the Sn-related oxygen deficient center has an absorption band around 4.83 eV.

Original language	English
Pages	665-668
Number of pages	4
Publication status	Published - 2001 Dec 1
Externally published	Yes
Event	Proceedings of 2001 International Symp. on Electrical Insulating Materials (ISEIM 2001) / 2001 Asian Conf. on Electrical Insulation Diagnosis (ACEID 2001) / 33rd Symp. on Electrical and Electronic Insulating Materials and Applications in Systems - Himeji, Japan Duration: 2001 Nov 19 → 2001 Nov 22

Conference

Conference	Proceedings of 2001 International Symp. on Electrical Insulating Materials (ISEIM 2001) / 2001 Asian Conf. on Electrical Insulation Diagnosis (ACEID 2001) / 33rd Symp. on Electrical and Electronic Insulating Materials and Applications in Systems
Country/Territory	Japan
City	Himeji
Period	01/11/19 → 01/11/22

ASJC Scopus subject areas

Engineering(all)
Materials Science(all)

Cite this

Fujimaki, M., Tokuhiro, S. I., Nakanishi, T., Nomura, K. I., Ohki, Y., & Imamura, K. (2001). Ultraviolet-photon-induced paramagnetic centers in GE and SN co-doped silica glass. 665-668. Paper presented at Proceedings of 2001 International Symp. on Electrical Insulating Materials (ISEIM 2001) / 2001 Asian Conf. on Electrical Insulation Diagnosis (ACEID 2001) / 33rd Symp. on Electrical and Electronic Insulating Materials and Applications in Systems, Himeji, Japan.

Ultraviolet-photon-induced paramagnetic centers in GE and SN co-doped silica glass. / Fujimaki, Makoto; Tokuhiro, Shin ichiro; Nakanishi, Tetsuya et al.
2001. 665-668 Paper presented at Proceedings of 2001 International Symp. on Electrical Insulating Materials (ISEIM 2001) / 2001 Asian Conf. on Electrical Insulation Diagnosis (ACEID 2001) / 33rd Symp. on Electrical and Electronic Insulating Materials and Applications in Systems, Himeji, Japan.

Research output: Contribution to conference › Paper › peer-review

Fujimaki, M, Tokuhiro, SI, Nakanishi, T, Nomura, KI, Ohki, Y & Imamura, K 2001, 'Ultraviolet-photon-induced paramagnetic centers in GE and SN co-doped silica glass', Paper presented at Proceedings of 2001 International Symp. on Electrical Insulating Materials (ISEIM 2001) / 2001 Asian Conf. on Electrical Insulation Diagnosis (ACEID 2001) / 33rd Symp. on Electrical and Electronic Insulating Materials and Applications in Systems, Himeji, Japan, 01/11/19 - 01/11/22 pp. 665-668.

Fujimaki M, Tokuhiro SI, Nakanishi T, Nomura KI, Ohki Y, Imamura K. Ultraviolet-photon-induced paramagnetic centers in GE and SN co-doped silica glass. 2001. Paper presented at Proceedings of 2001 International Symp. on Electrical Insulating Materials (ISEIM 2001) / 2001 Asian Conf. on Electrical Insulation Diagnosis (ACEID 2001) / 33rd Symp. on Electrical and Electronic Insulating Materials and Applications in Systems, Himeji, Japan.

Fujimaki, Makoto ; Tokuhiro, Shin ichiro ; Nakanishi, Tetsuya et al. / Ultraviolet-photon-induced paramagnetic centers in GE and SN co-doped silica glass. Paper presented at Proceedings of 2001 International Symp. on Electrical Insulating Materials (ISEIM 2001) / 2001 Asian Conf. on Electrical Insulation Diagnosis (ACEID 2001) / 33rd Symp. on Electrical and Electronic Insulating Materials and Applications in Systems, Himeji, Japan.4 p.

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abstract = "Paramagnetic centers and absorption bands in the visible-to-uv region in Ge and Sn co-doped SiO2 glass irradiated with UV photons from a KrF excimer laser were examined. The (Sn4+)- and the Sn E' centers were induced by the irradiation of KrF excimer laser photons. It was observed that the absorption of the (Sn4+)- is around 4.4 and 5.4 eV. Furthermore, it was found that the Sn-related oxygen deficient center has an absorption band around 4.83 eV.",

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year = "2001",

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note = "Proceedings of 2001 International Symp. on Electrical Insulating Materials (ISEIM 2001) / 2001 Asian Conf. on Electrical Insulation Diagnosis (ACEID 2001) / 33rd Symp. on Electrical and Electronic Insulating Materials and Applications in Systems ; Conference date: 19-11-2001 Through 22-11-2001",

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AU - Tokuhiro, Shin ichiro

AU - Nakanishi, Tetsuya

AU - Nomura, Ken ichi

AU - Ohki, Yoshimichi

AU - Imamura, Kazuo

PY - 2001/12/1

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AB - Paramagnetic centers and absorption bands in the visible-to-uv region in Ge and Sn co-doped SiO2 glass irradiated with UV photons from a KrF excimer laser were examined. The (Sn4+)- and the Sn E' centers were induced by the irradiation of KrF excimer laser photons. It was observed that the absorption of the (Sn4+)- is around 4.4 and 5.4 eV. Furthermore, it was found that the Sn-related oxygen deficient center has an absorption band around 4.83 eV.

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T2 - Proceedings of 2001 International Symp. on Electrical Insulating Materials (ISEIM 2001) / 2001 Asian Conf. on Electrical Insulation Diagnosis (ACEID 2001) / 33rd Symp. on Electrical and Electronic Insulating Materials and Applications in Systems

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Ultraviolet-photon-induced paramagnetic centers in GE and SN co-doped silica glass

Abstract

Conference

ASJC Scopus subject areas

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