Valence-band discontinuities between InGaN and GaN evaluated by capacitance-voltage characteristics of p-InGaN/n-GaN diodes

Toshiki Makimoto; Kazuhide Kumakura; Toshio Nishida; Naoki Kobayashi

doi:10.1007/s11664-002-0149-9

Valence-band discontinuities between InGaN and GaN evaluated by capacitance-voltage characteristics of p-InGaN/n-GaN diodes

Toshiki Makimoto^*, Kazuhide Kumakura, Toshio Nishida, Naoki Kobayashi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

Valence-band discontinuities between InGaN and GaN were evaluated using the capacitance-voltage characteristics of p-InGaN/n-GaN heterojunction diodes with high hole concentrations in p-InGaN. This capacitance-voltage method is effective to evaluate valence-band discontinuities because the influence of the piezoelectric charges at the heterojunction is ignored due to high acceptor concentrations. The built-in potential obtained from the capacitance-voltage measurements decreased with the In mole fraction of p-InGaN. This result indicates that the valence-band discontinuity (ΔE_v) increases with the In mole fraction (x) and is expressed as ΔE_v (eV) = 0.85x for x ≤ 0.28. The ΔE_v value obtained in this work is about 50% lower than that reported previously using the photoluminescence (PL) method.

Original language	English
Pages (from-to)	313-315
Number of pages	3
Journal	Journal of Electronic Materials
Volume	31
Issue number	4
DOIs	https://doi.org/10.1007/s11664-002-0149-9
Publication status	Published - 2002 Apr
Externally published	Yes

Keywords

Band offset
Capacitance-voltage characteristics
GaN
Heterojunction diode
InGaN
P-InGaN
Valence-band discontinuity

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1007/s11664-002-0149-9

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@article{b97e2e3cf0dd4d6289007f32c9bb0a57,

title = "Valence-band discontinuities between InGaN and GaN evaluated by capacitance-voltage characteristics of p-InGaN/n-GaN diodes",

abstract = "Valence-band discontinuities between InGaN and GaN were evaluated using the capacitance-voltage characteristics of p-InGaN/n-GaN heterojunction diodes with high hole concentrations in p-InGaN. This capacitance-voltage method is effective to evaluate valence-band discontinuities because the influence of the piezoelectric charges at the heterojunction is ignored due to high acceptor concentrations. The built-in potential obtained from the capacitance-voltage measurements decreased with the In mole fraction of p-InGaN. This result indicates that the valence-band discontinuity (ΔEv) increases with the In mole fraction (x) and is expressed as ΔEv (eV) = 0.85x for x ≤ 0.28. The ΔEv value obtained in this work is about 50% lower than that reported previously using the photoluminescence (PL) method.",

keywords = "Band offset, Capacitance-voltage characteristics, GaN, Heterojunction diode, InGaN, P-InGaN, Valence-band discontinuity",

author = "Toshiki Makimoto and Kazuhide Kumakura and Toshio Nishida and Naoki Kobayashi",

year = "2002",

month = apr,

doi = "10.1007/s11664-002-0149-9",

language = "English",

volume = "31",

pages = "313--315",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

number = "4",

}

TY - JOUR

T1 - Valence-band discontinuities between InGaN and GaN evaluated by capacitance-voltage characteristics of p-InGaN/n-GaN diodes

AU - Makimoto, Toshiki

AU - Kumakura, Kazuhide

AU - Nishida, Toshio

AU - Kobayashi, Naoki

PY - 2002/4

Y1 - 2002/4

N2 - Valence-band discontinuities between InGaN and GaN were evaluated using the capacitance-voltage characteristics of p-InGaN/n-GaN heterojunction diodes with high hole concentrations in p-InGaN. This capacitance-voltage method is effective to evaluate valence-band discontinuities because the influence of the piezoelectric charges at the heterojunction is ignored due to high acceptor concentrations. The built-in potential obtained from the capacitance-voltage measurements decreased with the In mole fraction of p-InGaN. This result indicates that the valence-band discontinuity (ΔEv) increases with the In mole fraction (x) and is expressed as ΔEv (eV) = 0.85x for x ≤ 0.28. The ΔEv value obtained in this work is about 50% lower than that reported previously using the photoluminescence (PL) method.

AB - Valence-band discontinuities between InGaN and GaN were evaluated using the capacitance-voltage characteristics of p-InGaN/n-GaN heterojunction diodes with high hole concentrations in p-InGaN. This capacitance-voltage method is effective to evaluate valence-band discontinuities because the influence of the piezoelectric charges at the heterojunction is ignored due to high acceptor concentrations. The built-in potential obtained from the capacitance-voltage measurements decreased with the In mole fraction of p-InGaN. This result indicates that the valence-band discontinuity (ΔEv) increases with the In mole fraction (x) and is expressed as ΔEv (eV) = 0.85x for x ≤ 0.28. The ΔEv value obtained in this work is about 50% lower than that reported previously using the photoluminescence (PL) method.

KW - Band offset

KW - Capacitance-voltage characteristics

KW - GaN

KW - Heterojunction diode

KW - InGaN

KW - P-InGaN

KW - Valence-band discontinuity

UR - http://www.scopus.com/inward/record.url?scp=0036539756&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036539756&partnerID=8YFLogxK

U2 - 10.1007/s11664-002-0149-9

DO - 10.1007/s11664-002-0149-9

M3 - Article

AN - SCOPUS:0036539756

SN - 0361-5235

VL - 31

SP - 313

EP - 315

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 4

ER -

Valence-band discontinuities between InGaN and GaN evaluated by capacitance-voltage characteristics of p-InGaN/n-GaN diodes

Abstract

Keywords

ASJC Scopus subject areas

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