TY - JOUR
T1 - Valence Band Modification of a (GaxIn1-x)2O3Solid Solution System Fabricated by Combinatorial Synthesis
AU - Nagata, Takahiro
AU - Hoga, Takeshi
AU - Yamashita, Akihiro
AU - Asahi, Toru
AU - Yagyu, Shinjiro
AU - Chikyow, Toyohiro
N1 - Funding Information:
This work was supported by the Japan Society for the Promotion of Science (JSPS) Bilateral Program (No. JPJSBP120197738) and the Japan Science and Technology Agency (JST) Mirai Program. WPI-MANA was established by the World Premier International Research Center Initiative (WPI), the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan. The authors wish to thank Ms. Mika Watanabe for technical support with the electrical measurements.
Publisher Copyright:
Copyright © 2020 American Chemical Society.
PY - 2020/9/14
Y1 - 2020/9/14
N2 - The correlation between the crystal structure and valence band structure of a (GaxIn1-x)2O3 solid solution system was investigated by using combinatorial synthesis. At a low Ga content of (GaxIn1-x)2O3 with a single-phase cubic In2O3 crystal structure, a surface electron accumulation layer (SEAL), which is an important electrical phenomenon in In2O3, was confirmed. When the Ga content increased to approximately x = 0.4, mixed crystal structures of Ga2O3 and In2O3 were produced. Above x = 0.5, the dominant valence band structure was attributed to Ga2O3, the SEAL disappeared, and the sheet resistance increased greatly by 5 orders of magnitude or more. The in-gap state and valence band structure of the (GaxIn1-x)2O3 solid solution system were strongly affected by Ga2O3; however, the valence band maximum position shifted to a higher binding energy.
AB - The correlation between the crystal structure and valence band structure of a (GaxIn1-x)2O3 solid solution system was investigated by using combinatorial synthesis. At a low Ga content of (GaxIn1-x)2O3 with a single-phase cubic In2O3 crystal structure, a surface electron accumulation layer (SEAL), which is an important electrical phenomenon in In2O3, was confirmed. When the Ga content increased to approximately x = 0.4, mixed crystal structures of Ga2O3 and In2O3 were produced. Above x = 0.5, the dominant valence band structure was attributed to Ga2O3, the SEAL disappeared, and the sheet resistance increased greatly by 5 orders of magnitude or more. The in-gap state and valence band structure of the (GaxIn1-x)2O3 solid solution system were strongly affected by Ga2O3; however, the valence band maximum position shifted to a higher binding energy.
KW - X-ray photoelectron spectroscopy
KW - combinatorial pulsed laser deposition method
KW - surface electron accumulation layer
KW - wide band gap oxide semiconductor
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U2 - 10.1021/acscombsci.0c00033
DO - 10.1021/acscombsci.0c00033
M3 - Article
C2 - 32659073
AN - SCOPUS:85090920105
SN - 2156-8952
VL - 22
SP - 433
EP - 439
JO - ACS Combinatorial Science
JF - ACS Combinatorial Science
IS - 9
ER -