Valence-band parameters and hole mobility of Ge-Si alloys-theory

K. Takeda*, A. Taguchi, M. Sakata

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

52 Citations (Scopus)


Using the Lawaetz method the authors have estimated the k.p band parameters and determined the band structure near the valence-band edge of the Ge-Si alloy system. They have also obtained the coupling constants between holes and phonons by Wiley's method. Using these two kinds of parameters they have calculated the time for relaxation of holes due to the lattice scattering, where they have taken into account the nonpolar optical phonon, the impurity scattering due to ionised and neutral centres and also the alloy scattering. The intervalence-band interactions are shown to produce the complicated temperature dependence of the hole mobility.

Original languageEnglish
Article number013
Pages (from-to)2237-2249
Number of pages13
JournalJournal of Physics C: Solid State Physics
Issue number12
Publication statusPublished - 1983
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • General Engineering
  • General Physics and Astronomy


Dive into the research topics of 'Valence-band parameters and hole mobility of Ge-Si alloys-theory'. Together they form a unique fingerprint.

Cite this