Vapor phase epitaxy of GaN using gallium tri-chloride and ammonia

Engineering & Materials Science

• Vapor phase epitaxy 100%
• Gallium 80%
• Ammonia 60%
• Epitaxial growth 31%
• Photoluminescence 18%
• Molecular beam epitaxy 17%
• Full width at half maximum 16%
• Buffer layers 16%
• Sapphire 15%
• Temperature 13%
• Single crystals 13%
• Atmospheric pressure 12%
• Surface morphology 12%
• Crystalline materials 11%
• Substrates 7%
• Gases 6%
• Experiments 4%

Chemical Compounds

• Vapor Phase Epitaxy 89%
• Ammonia 43%
• Liquid Film 27%
• Hexagonal Space Group 8%
• Photoluminescence 8%
• Single Crystalline Solid 8%
• Buffer Solution 7%
• Surface 7%
• Ambient Reaction Temperature 6%
• Gas 5%