Vertical integration of an InGaAsP/InP heterojunction bipolar transistor and a double heterostructure laser

T. R. Chen; K. Utaka; Y. H. Zhuang; Y. Y. Liu; A. Yariv

doi:10.1063/1.98018

Vertical integration of an InGaAsP/InP heterojunction bipolar transistor and a double heterostructure laser

T. R. Chen^*, K. Utaka, Y. H. Zhuang, Y. Y. Liu, A. Yariv

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

A double heterostructure InGaAsP/InP mesa laser and a mass transport laser were integrated vertically with an InGaAsP/InP double heterojunction bipolar transistor, resulting in the first realization of laser operation in a vertical integration. Laser thresholds as low as 17 mA and an output laser power of over 30 mW were observed. A new type of bistable laser and electro-optical switching were demonstrated.

Original language	English
Pages (from-to)	874-876
Number of pages	3
Journal	Applied Physics Letters
Volume	50
Issue number	14
DOIs	https://doi.org/10.1063/1.98018
Publication status	Published - 1987
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.98018

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title = "Vertical integration of an InGaAsP/InP heterojunction bipolar transistor and a double heterostructure laser",

abstract = "A double heterostructure InGaAsP/InP mesa laser and a mass transport laser were integrated vertically with an InGaAsP/InP double heterojunction bipolar transistor, resulting in the first realization of laser operation in a vertical integration. Laser thresholds as low as 17 mA and an output laser power of over 30 mW were observed. A new type of bistable laser and electro-optical switching were demonstrated.",

author = "Chen, {T. R.} and K. Utaka and Zhuang, {Y. H.} and Liu, {Y. Y.} and A. Yariv",

year = "1987",

doi = "10.1063/1.98018",

language = "English",

volume = "50",

pages = "874--876",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

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TY - JOUR

T1 - Vertical integration of an InGaAsP/InP heterojunction bipolar transistor and a double heterostructure laser

AU - Chen, T. R.

AU - Utaka, K.

AU - Zhuang, Y. H.

AU - Liu, Y. Y.

AU - Yariv, A.

PY - 1987

Y1 - 1987

N2 - A double heterostructure InGaAsP/InP mesa laser and a mass transport laser were integrated vertically with an InGaAsP/InP double heterojunction bipolar transistor, resulting in the first realization of laser operation in a vertical integration. Laser thresholds as low as 17 mA and an output laser power of over 30 mW were observed. A new type of bistable laser and electro-optical switching were demonstrated.

AB - A double heterostructure InGaAsP/InP mesa laser and a mass transport laser were integrated vertically with an InGaAsP/InP double heterojunction bipolar transistor, resulting in the first realization of laser operation in a vertical integration. Laser thresholds as low as 17 mA and an output laser power of over 30 mW were observed. A new type of bistable laser and electro-optical switching were demonstrated.

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U2 - 10.1063/1.98018

DO - 10.1063/1.98018

M3 - Article

AN - SCOPUS:0010258427

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VL - 50

SP - 874

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

ER -

Vertical integration of an InGaAsP/InP heterojunction bipolar transistor and a double heterostructure laser

Abstract

ASJC Scopus subject areas

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