Vertically aligned carbon nanotube growth from Ni nanoparticles prepared by ion implantation

T. Iwasaki; S. Mejima; T. Koide; R. Morikane; H. Nakayama; T. Shinada; I. Ohdomari; H. Kawarada

doi:10.1016/j.diamond.2008.02.006

Vertically aligned carbon nanotube growth from Ni nanoparticles prepared by ion implantation

T. Iwasaki^*, S. Mejima, T. Koide, R. Morikane, H. Nakayama, T. Shinada, I. Ohdomari, H. Kawarada

^*Corresponding author for this work

School of Fundamental Science and Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Vertically aligned carbon nanotubes (CNTs) were synthesized from Ni nanoparticles prepared by ion implantation. Ni ions were implanted at 30 keV into thermally grown SiO₂ substrates using a focused-ion-beam. High-density nanoparticle formation was investigated with high doses up to 5.0 × 10¹⁷ ions/cm². Dense Ni nanoparticles in the order of 10¹¹-10¹² cm^{- 2} were obtained on a SiO₂ substrate, and the particle density and diameter were controlled by post-implantation annealing. Particles annealed at 700 °C led to vertically aligned CNTs. Interestingly, catalysts were longer along the vertical axis and the lower half of the Ni particle was buried in SiO₂.

Original language	English
Pages (from-to)	1443-1446
Number of pages	4
Journal	Diamond and Related Materials
Volume	17
Issue number	7-10
DOIs	https://doi.org/10.1016/j.diamond.2008.02.006
Publication status	Published - 2008 Jul

Keywords

Carbon nanotube
Ion implantation
Nanoparticle
Vertically aligned

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Chemistry(all)
Mechanical Engineering
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/j.diamond.2008.02.006

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@article{f568827c247a4e0ca95efa0a8af5b5fc,

title = "Vertically aligned carbon nanotube growth from Ni nanoparticles prepared by ion implantation",

abstract = "Vertically aligned carbon nanotubes (CNTs) were synthesized from Ni nanoparticles prepared by ion implantation. Ni ions were implanted at 30 keV into thermally grown SiO2 substrates using a focused-ion-beam. High-density nanoparticle formation was investigated with high doses up to 5.0 × 1017 ions/cm2. Dense Ni nanoparticles in the order of 1011-1012 cm- 2 were obtained on a SiO2 substrate, and the particle density and diameter were controlled by post-implantation annealing. Particles annealed at 700 °C led to vertically aligned CNTs. Interestingly, catalysts were longer along the vertical axis and the lower half of the Ni particle was buried in SiO2.",

keywords = "Carbon nanotube, Ion implantation, Nanoparticle, Vertically aligned",

author = "T. Iwasaki and S. Mejima and T. Koide and R. Morikane and H. Nakayama and T. Shinada and I. Ohdomari and H. Kawarada",

year = "2008",

month = jul,

doi = "10.1016/j.diamond.2008.02.006",

language = "English",

volume = "17",

pages = "1443--1446",

journal = "Diamond and Related Materials",

issn = "0925-9635",

publisher = "Elsevier BV",

number = "7-10",

}

TY - JOUR

T1 - Vertically aligned carbon nanotube growth from Ni nanoparticles prepared by ion implantation

AU - Iwasaki, T.

AU - Mejima, S.

AU - Koide, T.

AU - Morikane, R.

AU - Nakayama, H.

AU - Shinada, T.

AU - Ohdomari, I.

AU - Kawarada, H.

PY - 2008/7

Y1 - 2008/7

N2 - Vertically aligned carbon nanotubes (CNTs) were synthesized from Ni nanoparticles prepared by ion implantation. Ni ions were implanted at 30 keV into thermally grown SiO2 substrates using a focused-ion-beam. High-density nanoparticle formation was investigated with high doses up to 5.0 × 1017 ions/cm2. Dense Ni nanoparticles in the order of 1011-1012 cm- 2 were obtained on a SiO2 substrate, and the particle density and diameter were controlled by post-implantation annealing. Particles annealed at 700 °C led to vertically aligned CNTs. Interestingly, catalysts were longer along the vertical axis and the lower half of the Ni particle was buried in SiO2.

AB - Vertically aligned carbon nanotubes (CNTs) were synthesized from Ni nanoparticles prepared by ion implantation. Ni ions were implanted at 30 keV into thermally grown SiO2 substrates using a focused-ion-beam. High-density nanoparticle formation was investigated with high doses up to 5.0 × 1017 ions/cm2. Dense Ni nanoparticles in the order of 1011-1012 cm- 2 were obtained on a SiO2 substrate, and the particle density and diameter were controlled by post-implantation annealing. Particles annealed at 700 °C led to vertically aligned CNTs. Interestingly, catalysts were longer along the vertical axis and the lower half of the Ni particle was buried in SiO2.

KW - Carbon nanotube

KW - Ion implantation

KW - Nanoparticle

KW - Vertically aligned

UR - http://www.scopus.com/inward/record.url?scp=48849104210&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=48849104210&partnerID=8YFLogxK

U2 - 10.1016/j.diamond.2008.02.006

DO - 10.1016/j.diamond.2008.02.006

M3 - Article

AN - SCOPUS:48849104210

SN - 0925-9635

VL - 17

SP - 1443

EP - 1446

JO - Diamond and Related Materials

JF - Diamond and Related Materials

IS - 7-10

ER -

Vertically aligned carbon nanotube growth from Ni nanoparticles prepared by ion implantation

Abstract

Keywords

ASJC Scopus subject areas

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