Very high speed GaInAs metal-semiconductor-metal photodiode incorporating an AlInAs/GaInAs graded superlattice

O. Wada; H. Nobuhara; H. Hamaguchi; T. Mikawa; A. Tackeuchi; T. Fujii

doi:10.1063/1.100822

Very high speed GaInAs metal-semiconductor-metal photodiode incorporating an AlInAs/GaInAs graded superlattice

O. Wada^*, H. Nobuhara, H. Hamaguchi, T. Mikawa, A. Tackeuchi, T. Fujii

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

A lateral structure metal-semiconductor-metal photodiode has been fabricated on GaInAs, in which an AlInAs/GaInAs graded superlattice has been incorporated. This photodiode has exhibited a dark current lower than 100 nA, an internal quantum efficiency of greater than 80% at a wavelength of 1.3 μm, and a capacitance of 40 fF, all at the bias voltage of 10 V. The response speed of this photodiode has been characterized by electro-optic sampling to exhibit a full width at half maximum of 14.7 ps.

Original language	English
Pages (from-to)	16-17
Number of pages	2
Journal	Applied Physics Letters
Volume	54
Issue number	1
DOIs	https://doi.org/10.1063/1.100822
Publication status	Published - 1989
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.100822

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title = "Very high speed GaInAs metal-semiconductor-metal photodiode incorporating an AlInAs/GaInAs graded superlattice",

abstract = "A lateral structure metal-semiconductor-metal photodiode has been fabricated on GaInAs, in which an AlInAs/GaInAs graded superlattice has been incorporated. This photodiode has exhibited a dark current lower than 100 nA, an internal quantum efficiency of greater than 80% at a wavelength of 1.3 μm, and a capacitance of 40 fF, all at the bias voltage of 10 V. The response speed of this photodiode has been characterized by electro-optic sampling to exhibit a full width at half maximum of 14.7 ps.",

author = "O. Wada and H. Nobuhara and H. Hamaguchi and T. Mikawa and A. Tackeuchi and T. Fujii",

year = "1989",

doi = "10.1063/1.100822",

language = "English",

volume = "54",

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AU - Wada, O.

AU - Nobuhara, H.

AU - Hamaguchi, H.

AU - Mikawa, T.

AU - Tackeuchi, A.

AU - Fujii, T.

PY - 1989

Y1 - 1989

N2 - A lateral structure metal-semiconductor-metal photodiode has been fabricated on GaInAs, in which an AlInAs/GaInAs graded superlattice has been incorporated. This photodiode has exhibited a dark current lower than 100 nA, an internal quantum efficiency of greater than 80% at a wavelength of 1.3 μm, and a capacitance of 40 fF, all at the bias voltage of 10 V. The response speed of this photodiode has been characterized by electro-optic sampling to exhibit a full width at half maximum of 14.7 ps.

AB - A lateral structure metal-semiconductor-metal photodiode has been fabricated on GaInAs, in which an AlInAs/GaInAs graded superlattice has been incorporated. This photodiode has exhibited a dark current lower than 100 nA, an internal quantum efficiency of greater than 80% at a wavelength of 1.3 μm, and a capacitance of 40 fF, all at the bias voltage of 10 V. The response speed of this photodiode has been characterized by electro-optic sampling to exhibit a full width at half maximum of 14.7 ps.

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JF - Applied Physics Letters

IS - 1

ER -

Very high speed GaInAs metal-semiconductor-metal photodiode incorporating an AlInAs/GaInAs graded superlattice

Abstract

ASJC Scopus subject areas

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