VIB-6 Hall Effect Analysis of Charge Transport in Silicon Dioxide-Silicon Nitride Double Layers

A. Hiraiwa; J. Yugami; S. Ihjima; T. Kusaka; Y. Ohji

doi:10.1109/T-ED.1987.23321

VIB-6 Hall Effect Analysis of Charge Transport in Silicon Dioxide-Silicon Nitride Double Layers

A. Hiraiwa, J. Yugami, S. Ihjima, T. Kusaka, Y. Ohji

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	2386
Number of pages	1
Journal	IEEE Transactions on Electron Devices
Volume	34
Issue number	11
DOIs	https://doi.org/10.1109/T-ED.1987.23321
Publication status	Published - 1987
Externally published	Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

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10.1109/T-ED.1987.23321

Cite this

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title = "VIB-6 Hall Effect Analysis of Charge Transport in Silicon Dioxide-Silicon Nitride Double Layers",

author = "A. Hiraiwa and J. Yugami and S. Ihjima and T. Kusaka and Y. Ohji",

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language = "English",

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AU - Hiraiwa, A.

AU - Yugami, J.

AU - Ihjima, S.

AU - Kusaka, T.

AU - Ohji, Y.

PY - 1987

Y1 - 1987

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VL - 34

SP - 2386

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 11

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VIB-6 Hall Effect Analysis of Charge Transport in Silicon Dioxide-Silicon Nitride Double Layers

ASJC Scopus subject areas

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