TY - JOUR
T1 - Volatile/nonvolatile dual-functional atom transistor
AU - Hasegawa, Tsuyoshi
AU - Itoh, Yaomi
AU - Tanaka, Hirofumi
AU - Hino, Takami
AU - Tsuruoka, Tohru
AU - Terabe, Kazuya
AU - Miyazaki, Hisao
AU - Tsukagoshi, Kazuhito
AU - Ogawa, Takuji
AU - Yamaguchi, Shu
AU - Aono, Masakazu
PY - 2011/1/1
Y1 - 2011/1/1
N2 - We demonstrate a conceptually new atom transistor operation by electric-field control of the nanoionic state. The new atom transistor possesses novel characteristics, such as dual functionality of selective volatile and nonvolatile operations, very small power consumption (pW), and a high ON/OFF ratio [106 (volatile operation) to 108 (nonvolatile operation)], in addition to complementary metal oxide semiconductor (CMOS) process compatibility enabling the development of future computing systems that fully utilize highly-integrated CMOS technology. Cyclic endurance of 10 4 times switching was achieved with the prototype.
AB - We demonstrate a conceptually new atom transistor operation by electric-field control of the nanoionic state. The new atom transistor possesses novel characteristics, such as dual functionality of selective volatile and nonvolatile operations, very small power consumption (pW), and a high ON/OFF ratio [106 (volatile operation) to 108 (nonvolatile operation)], in addition to complementary metal oxide semiconductor (CMOS) process compatibility enabling the development of future computing systems that fully utilize highly-integrated CMOS technology. Cyclic endurance of 10 4 times switching was achieved with the prototype.
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U2 - 10.1143/APEX.4.015204
DO - 10.1143/APEX.4.015204
M3 - Article
AN - SCOPUS:79251584327
SN - 1882-0778
VL - 4
JO - Applied Physics Express
JF - Applied Physics Express
IS - 1
M1 - 015204
ER -