Volatile/nonvolatile dual-functional atom transistor

Tsuyoshi Hasegawa*, Yaomi Itoh, Hirofumi Tanaka, Takami Hino, Tohru Tsuruoka, Kazuya Terabe, Hisao Miyazaki, Kazuhito Tsukagoshi, Takuji Ogawa, Shu Yamaguchi, Masakazu Aono

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

39 Citations (Scopus)


We demonstrate a conceptually new atom transistor operation by electric-field control of the nanoionic state. The new atom transistor possesses novel characteristics, such as dual functionality of selective volatile and nonvolatile operations, very small power consumption (pW), and a high ON/OFF ratio [106 (volatile operation) to 108 (nonvolatile operation)], in addition to complementary metal oxide semiconductor (CMOS) process compatibility enabling the development of future computing systems that fully utilize highly-integrated CMOS technology. Cyclic endurance of 10 4 times switching was achieved with the prototype.

Original languageEnglish
Article number015204
JournalApplied Physics Express
Issue number1
Publication statusPublished - 2011 Jan 1
Externally publishedYes

ASJC Scopus subject areas

  • General Engineering
  • General Physics and Astronomy


Dive into the research topics of 'Volatile/nonvolatile dual-functional atom transistor'. Together they form a unique fingerprint.

Cite this