Abstract
Voltage-driven distribution of gate oxide breakdown was studied. The samples considered were NMOS capacitors with wet oxides thermally grown on p-type epitaxial substrates. It was found that the distribution of gate oxide breakdown depends on gate voltage and not on the oxide thickness.
| Original language | English |
|---|---|
| Title of host publication | Annual Proceedings - Reliability Physics (Symposium) |
| Pages | 582-583 |
| Number of pages | 2 |
| Publication status | Published - 2003 |
| Externally published | Yes |
| Event | 2003 IEEE International Reliability Physics Symposium Proceedings - Dallas, TX, United States Duration: 2003 Mar 30 → 2003 Apr 4 |
Other
| Other | 2003 IEEE International Reliability Physics Symposium Proceedings |
|---|---|
| Country/Territory | United States |
| City | Dallas, TX |
| Period | 03/3/30 → 03/4/4 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Safety, Risk, Reliability and Quality