Abstract
Infrared spectra of the light-emitting diodes fabricated with poly(2-methoxy-5-(2′-ethylhexyloxy)-p-phenylenevinylene) have been measured in situ with an external reflection apparatus on a Fourier-transform infrared spectrophotometer. Voltage-induced infrared absorption spectra have been measured using the difference-spectrum method. The observed bands have been attributed to injected positive carriers (polarons) on the basis of the spectra of the carriers generated by iodine-doping, Na-doping, and photo-irradiation. The observation of positive carriers is probably related to the predominance of injected positive carriers, which reduces the electroluminescence efficiency of the light-emitting diodes.
Original language | English |
---|---|
Pages (from-to) | 1649-1650 |
Number of pages | 2 |
Journal | Synthetic Metals |
Volume | 121 |
Issue number | 1-3 |
DOIs | |
Publication status | Published - 2001 Mar 15 |
Keywords
- Electroluminescence
- Infrared and Raman spectroscopy
- Poly(phenylenevinylene) and derivatives
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
- Metals and Alloys
- Materials Chemistry