Voltage-induced infrared absorption of the light-emitting diode based on MEH-PPV

Yukio Furukawa*, Mitsuru Ishima, Takanobu Noguchi, Toshihiro Ohnishi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


Infrared spectra of the light-emitting diodes fabricated with poly(2-methoxy-5-(2′-ethylhexyloxy)-p-phenylenevinylene) have been measured in situ with an external reflection apparatus on a Fourier-transform infrared spectrophotometer. Voltage-induced infrared absorption spectra have been measured using the difference-spectrum method. The observed bands have been attributed to injected positive carriers (polarons) on the basis of the spectra of the carriers generated by iodine-doping, Na-doping, and photo-irradiation. The observation of positive carriers is probably related to the predominance of injected positive carriers, which reduces the electroluminescence efficiency of the light-emitting diodes.

Original languageEnglish
Pages (from-to)1649-1650
Number of pages2
JournalSynthetic Metals
Issue number1-3
Publication statusPublished - 2001 Mar 15


  • Electroluminescence
  • Infrared and Raman spectroscopy
  • Poly(phenylenevinylene) and derivatives

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry


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