Vmin=0.4 v LSIs are the real with silicon-on-thin-buried-oxide (SOTB)-How is the application with 'Perpetuum-Mobile' micro-controller with SOTB?

N. Sugii; T. Iwamatsu; Y. Yamamoto; H. Makiyama; H. Shinohara; H. Oda; S. Kamohara; Y. Yamaguchi; K. Ishibashi; T. Mizutani; T. Hiramoto

doi:10.1109/S3S.2013.6716576

V_min=0.4 v LSIs are the real with silicon-on-thin-buried-oxide (SOTB)-How is the application with 'Perpetuum-Mobile' micro-controller with SOTB?

N. Sugii, T. Iwamatsu, Y. Yamamoto, H. Makiyama, H. Shinohara, H. Oda, S. Kamohara, Y. Yamaguchi, K. Ishibashi, T. Mizutani, T. Hiramoto

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Ultralow-voltage (ULV) CMOS will be a core building block of highly energy efficient electronics. Although the near-or sub-V_th operation is effective in reducing energy per operation of CMOS circuits, its slow operation speed can miss a chance to be used in many applications. The silicon-on-thin-buried-oxide (SOTB) CMOS is a strong candidate for the ul-tralow-power (ULP) electronics because of its small variability and back-bias control. This paper describes our results on the ULV operation of SRAM and ring oscillator (RO) circuits and shows the operation speed is now sufficiently high for many ULP applications. The 'Perpetuum-Mobile' micro-controllers operating at ∼0.4 V are expected to be implemented in many applications such as the internet of things.

Original language	English
Title of host publication	2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013
Publisher	IEEE Computer Society
ISBN (Print)	9781479913602
DOIs	https://doi.org/10.1109/S3S.2013.6716576
Publication status	Published - 2013
Externally published	Yes
Event	2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013 - Monterey, CA, United States Duration: 2013 Oct 7 → 2013 Oct 10

Publication series

Name	2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013

Other

Other	2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013
Country/Territory	United States
City	Monterey, CA
Period	13/10/7 → 13/10/10

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/S3S.2013.6716576

Cite this

Sugii, N., Iwamatsu, T., Yamamoto, Y., Makiyama, H., Shinohara, H., Oda, H., Kamohara, S., Yamaguchi, Y., Ishibashi, K., Mizutani, T., & Hiramoto, T. (2013). V_min=0.4 v LSIs are the real with silicon-on-thin-buried-oxide (SOTB)-How is the application with 'Perpetuum-Mobile' micro-controller with SOTB? In 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013 Article 6716576 (2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013). IEEE Computer Society. https://doi.org/10.1109/S3S.2013.6716576

V_min=0.4 v LSIs are the real with silicon-on-thin-buried-oxide (SOTB)-How is the application with 'Perpetuum-Mobile' micro-controller with SOTB? / Sugii, N.; Iwamatsu, T.; Yamamoto, Y. et al.
2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013. IEEE Computer Society, 2013. 6716576 (2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Sugii, N, Iwamatsu, T, Yamamoto, Y, Makiyama, H, Shinohara, H, Oda, H, Kamohara, S, Yamaguchi, Y, Ishibashi, K, Mizutani, T & Hiramoto, T 2013, V_min=0.4 v LSIs are the real with silicon-on-thin-buried-oxide (SOTB)-How is the application with 'Perpetuum-Mobile' micro-controller with SOTB? in 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013., 6716576, 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013, IEEE Computer Society, 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013, Monterey, CA, United States, 13/10/7. https://doi.org/10.1109/S3S.2013.6716576

Sugii N, Iwamatsu T, Yamamoto Y, Makiyama H, Shinohara H, Oda H et al. V_min=0.4 v LSIs are the real with silicon-on-thin-buried-oxide (SOTB)-How is the application with 'Perpetuum-Mobile' micro-controller with SOTB? In 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013. IEEE Computer Society. 2013. 6716576. (2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013). doi: 10.1109/S3S.2013.6716576

Sugii, N. ; Iwamatsu, T. ; Yamamoto, Y. et al. / V_min=0.4 v LSIs are the real with silicon-on-thin-buried-oxide (SOTB)-How is the application with 'Perpetuum-Mobile' micro-controller with SOTB?. 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013. IEEE Computer Society, 2013. (2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013).

@inproceedings{5ff9d45ca0b747c8862cf8a32bd779cb,

title = "Vmin=0.4 v LSIs are the real with silicon-on-thin-buried-oxide (SOTB)-How is the application with 'Perpetuum-Mobile' micro-controller with SOTB?",

abstract = "Ultralow-voltage (ULV) CMOS will be a core building block of highly energy efficient electronics. Although the near-or sub-Vth operation is effective in reducing energy per operation of CMOS circuits, its slow operation speed can miss a chance to be used in many applications. The silicon-on-thin-buried-oxide (SOTB) CMOS is a strong candidate for the ul-tralow-power (ULP) electronics because of its small variability and back-bias control. This paper describes our results on the ULV operation of SRAM and ring oscillator (RO) circuits and shows the operation speed is now sufficiently high for many ULP applications. The 'Perpetuum-Mobile' micro-controllers operating at ∼0.4 V are expected to be implemented in many applications such as the internet of things.",

author = "N. Sugii and T. Iwamatsu and Y. Yamamoto and H. Makiyama and H. Shinohara and H. Oda and S. Kamohara and Y. Yamaguchi and K. Ishibashi and T. Mizutani and T. Hiramoto",

year = "2013",

doi = "10.1109/S3S.2013.6716576",

language = "English",

isbn = "9781479913602",

series = "2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013",

publisher = "IEEE Computer Society",

booktitle = "2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013",

note = "2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013 ; Conference date: 07-10-2013 Through 10-10-2013",