Wafer bonding of SiC-SiC and SiC-Si by modified suface activated bonding method

Fengwen Mu; Masahisa Fujino; Tadatomo Suga; Yoshikazu Takahashi; Haruo Nakazawa; Kenichi Iguchi

doi:10.1109/ICEP-IAAC.2015.7111073

Wafer bonding of SiC-SiC and SiC-Si by modified suface activated bonding method

Fengwen Mu, Masahisa Fujino, Tadatomo Suga, Yoshikazu Takahashi, Haruo Nakazawa, Kenichi Iguchi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

SiC-SiC and SiC-Si wafer bonding has been achieved by two different modified surface activated bonding (SAB) methods without any chemical-clean treatment and high temperature annealing. Bonding strength of SiC-SiC is even higher than 32MPa. Bonding strength of SiC-Si bonded pair is also higher than the bulk strength of Si. The bonded wafers were almost completely bonded without some voids or peripheral area, which should be caused by some partilces and wafer warpage. The interfaces of bonded SiC-SiC and SiC-Si have been analyzed by high-resolution transmission electron microscopy (HRTEM) to verify the bonding mechanism.

Original language	English
Title of host publication	ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	542-545
Number of pages	4
ISBN (Electronic)	9784904090138
DOIs	https://doi.org/10.1109/ICEP-IAAC.2015.7111073
Publication status	Published - 2015 May 20
Externally published	Yes
Event	2015 International Conference on Electronic Packaging and iMAPS All Asia Conference, ICEP-IAAC 2015 - Kyoto, Japan Duration: 2015 Apr 14 → 2015 Apr 17

Publication series

Name	ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference

Other

Other	2015 International Conference on Electronic Packaging and iMAPS All Asia Conference, ICEP-IAAC 2015
Country/Territory	Japan
City	Kyoto
Period	15/4/14 → 15/4/17

Keywords

bonding strength
interface
SiC
surface activated bonding
wafer bonding

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/ICEP-IAAC.2015.7111073

Cite this

Mu, F., Fujino, M., Suga, T., Takahashi, Y., Nakazawa, H., & Iguchi, K. (2015). Wafer bonding of SiC-SiC and SiC-Si by modified suface activated bonding method. In ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference (pp. 542-545). Article 7111073 (ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICEP-IAAC.2015.7111073

Wafer bonding of SiC-SiC and SiC-Si by modified suface activated bonding method. / Mu, Fengwen; Fujino, Masahisa; Suga, Tadatomo et al.
ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference. Institute of Electrical and Electronics Engineers Inc., 2015. p. 542-545 7111073 (ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Mu, F, Fujino, M, Suga, T, Takahashi, Y, Nakazawa, H & Iguchi, K 2015, Wafer bonding of SiC-SiC and SiC-Si by modified suface activated bonding method. in ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference., 7111073, ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference, Institute of Electrical and Electronics Engineers Inc., pp. 542-545, 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference, ICEP-IAAC 2015, Kyoto, Japan, 15/4/14. https://doi.org/10.1109/ICEP-IAAC.2015.7111073

Mu F, Fujino M, Suga T, Takahashi Y, Nakazawa H, Iguchi K. Wafer bonding of SiC-SiC and SiC-Si by modified suface activated bonding method. In ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference. Institute of Electrical and Electronics Engineers Inc. 2015. p. 542-545. 7111073. (ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference). doi: 10.1109/ICEP-IAAC.2015.7111073

Mu, Fengwen ; Fujino, Masahisa ; Suga, Tadatomo et al. / Wafer bonding of SiC-SiC and SiC-Si by modified suface activated bonding method. ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 542-545 (ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference).

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abstract = "SiC-SiC and SiC-Si wafer bonding has been achieved by two different modified surface activated bonding (SAB) methods without any chemical-clean treatment and high temperature annealing. Bonding strength of SiC-SiC is even higher than 32MPa. Bonding strength of SiC-Si bonded pair is also higher than the bulk strength of Si. The bonded wafers were almost completely bonded without some voids or peripheral area, which should be caused by some partilces and wafer warpage. The interfaces of bonded SiC-SiC and SiC-Si have been analyzed by high-resolution transmission electron microscopy (HRTEM) to verify the bonding mechanism.",

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author = "Fengwen Mu and Masahisa Fujino and Tadatomo Suga and Yoshikazu Takahashi and Haruo Nakazawa and Kenichi Iguchi",

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AU - Mu, Fengwen

AU - Fujino, Masahisa

AU - Suga, Tadatomo

AU - Takahashi, Yoshikazu

AU - Nakazawa, Haruo

AU - Iguchi, Kenichi

PY - 2015/5/20

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N2 - SiC-SiC and SiC-Si wafer bonding has been achieved by two different modified surface activated bonding (SAB) methods without any chemical-clean treatment and high temperature annealing. Bonding strength of SiC-SiC is even higher than 32MPa. Bonding strength of SiC-Si bonded pair is also higher than the bulk strength of Si. The bonded wafers were almost completely bonded without some voids or peripheral area, which should be caused by some partilces and wafer warpage. The interfaces of bonded SiC-SiC and SiC-Si have been analyzed by high-resolution transmission electron microscopy (HRTEM) to verify the bonding mechanism.

AB - SiC-SiC and SiC-Si wafer bonding has been achieved by two different modified surface activated bonding (SAB) methods without any chemical-clean treatment and high temperature annealing. Bonding strength of SiC-SiC is even higher than 32MPa. Bonding strength of SiC-Si bonded pair is also higher than the bulk strength of Si. The bonded wafers were almost completely bonded without some voids or peripheral area, which should be caused by some partilces and wafer warpage. The interfaces of bonded SiC-SiC and SiC-Si have been analyzed by high-resolution transmission electron microscopy (HRTEM) to verify the bonding mechanism.

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Wafer bonding of SiC-SiC and SiC-Si by modified suface activated bonding method

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